There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

Computational geometry

We show that the Raman scattering technique can give complete structural information for one-dimensional systems, such as carbon nanotubes. Resonant confocal micro-Raman spectroscopy of an (n,m) individual single-wall nanotube makes it possible to assign its chirality uniquely by measuring one radial breathing mode frequency omega(RBM) and using the theory of resonant transitions. A unique chirality assignment can be made for both metallic and semiconducting nanotubes of diameter d(t), using the parameters gamma(0) = 2.9 eV and omega(RBM) = 248/d(t). For example, the strong RBM intensity observed at 156 cm(-1) for 785 nm laser excitation is assigned to the (13,10) metallic chiral nanotube on a Si/SiO2 surface.

Structural (n,m) determination of isolated single wall carbon nanotubes by resonant Raman scattering

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/. Damaging the crystal has a strong influence on /spl alpha/, /spl alpha/ may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The /spl alpha/ values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices. >

1/f Noise Sources

In-field high throughput grapevine phenotyping with a consumer-grade depth camera

We present a compact, semiempirical model of carbon nanotube field effect transistor easily implementable in simulation SPICE software to design analog and digital circuits. The model is based on analytical approximations and parameters extracted from quantum mechanical simulations, having compared the results with those of the numerical model online available and of experimental data.

Roberto Marani

Papers

In-field high throughput grapevine phenotyping with a consumer-grade depth camera

A Semiempirical SPICE Model for n-Type Conventional CNTFETs

Modelling of Carbon Nanotube Field Effect Transistors oriented to SPICE software for A/D circuit design

A Compact, Semi-empirical Model of Carbon Nanotube Field Effect Transistors Oriented to Simulation Software

Comparison of ABM SPICE Library with Verilog-A for Compact CNTFET Model Implementation