Robin Cerutti

TL;DR: In this paper, the poly-gate replacement through contact hole (PRETCH) concept enables replacement of initial poly-silicon gate and/or gate oxide by any gate stack desired.

TL;DR: In this article, the role of non-Coulombian defects, which can be healed by increasing the annealing temperature, is evidenced, and a new mobility degradation specific to short channel MOSFETs is studied and elucidated.

TL;DR: In this article, a continuous compact model for the drain current, including short-channel effects and carrier quantization in Double-Gate MOSFETs, is developed, particularly well-adapted to ultra-scaled devices, with short channel lengths and ultra-thin silicon films.

TL;DR: An integrated circuit comprising a semiconductor substrate in which active areas surround or are surrounded by hollowings filled with an insulator, and in which a conductive region is embedded in the insulator of at least one hollowing, the conductive regions being connected to a reference voltage and being connected at least a neighboring element of the circuit is defined in this paper.

TL;DR: In this article, highly performant double gate devices have been obtained with very high Ion/Ioff trade off drive currents of 1954 /spl mu/A/A//spl m/m (Ioff = 283 nA/m) and 1333 /spl µ/A+m/m µ/m m/a+spl m /m) at 12 V with Tox = 20 /spl Aring/ and Lgate = 70 nm.