Roozbeh Tabrizian

TL;DR: In this paper, a high quality-factor (Q) super-high-frequency bulk acoustic wave resonator realized from integration of aluminum nitride (AlN) on sidewalls of a non-released single crystal silicon (Si) micro-fin is presented.

TL;DR: In this article, a fabrication process is developed to grow aluminum nitride (AlN) films on the sidewall of single-crystal silicon (Si) microfins to realize fin bulk acoustic wave resonators (FinBARs).

TL;DR: In this article, a super-thin (30nm) integrated metal-ferroelectric-metal (MFM) nano-mechanical resonator using atomically engineered hafnium zirconium oxide (Hf 0.5 Zr 0.2 ) transducer film is reported.

Abstract: This paper presents an acoustically engineered nano-waveguide resonator implemented in an aluminum nitride-on-silicon bilayer with an overall thickness of less than 200nm. Acoustic engineering using dispersion characteristics of laterally propagating waves with cross-sectional flexural polarization has been used to realize efficient energy trapping without the need for narrow suspending supports, thus improving device power handling. Having a large aspect ratio, the bilayer nano-waveguide resonator experiences an amplified thermally induced axial stress, which results in a very high temperature coefficient of its resonance frequency. Such characteristics along with the minuscule volume and large peripheral acoustic energy density make the device an exceptional candidate for sensing applications where an increased thermal responsivity and large interaction cross-section are desirable. A prototype device operating at ∼870kHz frequency with a Q of ∼140 — measured in air — shows a vibration amplitude of 100nm at 3V and a linear TCF of ∼ −710 ppm / °C when actuated piezoelectrically with 500 mv at resonance.