P
Philip X.-L. Feng
Researcher at University of Florida
Publications - 227
Citations - 3862
Philip X.-L. Feng is an academic researcher from University of Florida. The author has contributed to research in topics: Resonator & Nanoelectromechanical systems. The author has an hindex of 26, co-authored 203 publications receiving 2827 citations. Previous affiliations of Philip X.-L. Feng include Case Western Reserve University & California Institute of Technology.
Papers
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Journal ArticleDOI
Polytype control of spin qubits in silicon carbide
Abram L. Falk,Bob B. Buckley,Greg Calusine,William F. Koehl,Viatcheslav Dobrovitski,Alberto Politi,Christian A. Zorman,Philip X.-L. Feng,David D. Awschalom +8 more
TL;DR: It is shown that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including states in all three with room-temperature quantum coherence, which shows that crystal polymorphism can be a degree of freedom for engineering spin qubits.
Journal ArticleDOI
High frequency MoS2 nanomechanical resonators
TL;DR: The experimental results from many devices with a wide range of thicknesses and lateral sizes, in combination with theoretical analysis, quantitatively elucidate the elastic transition regimes in these ultrathin MoS2 nanomechanical resonators.
Journal Article
Polytype control of spin qubits in silicon carbide
Journal ArticleDOI
Black phosphorus nanoelectromechanical resonators vibrating at very high frequencies.
Zenghui Wang,Hao Jia,Xu-Qian Zheng,Rui Yang,Zefang Wang,Guo Jun Ye,Xianhui Chen,Jie Shan,Philip X.-L. Feng +8 more
TL;DR: In this paper, a new type of nanoelectromechanical resonator based on black phosphorus crystals is demonstrated, which is capable of vibrating at high and very high frequencies (HF and VHF bands, up to ∼100 MHz).
Journal ArticleDOI
Electrically tunable single- and few-layer MoS2 nanoelectromechanical systems with broad dynamic range.
Jaesung Lee,Zenghui Wang,Zenghui Wang,Keliang He,Rui Yang,Jie Shan,Jie Shan,Philip X.-L. Feng +7 more
TL;DR: This work reports the first experimental demonstration of clearly defined single-, bi-, and trilayer MoS2 2D resonant NEMS operating in the very high frequency band with outstanding electrical tunability and DR.