Ru Huang

TL;DR: The synaptic activity can be effectively manipulated by tailoring the ionic gating and consequent diffusion dynamics with varied thickness and structure of the van der Waals material as well as the number, duration, rate, and polarity of gate stimulations, making the present synaptic transistors intriguing candidates for low‐power neuromorphic systems.

TL;DR: A novel approach to engineering the analog switching linearity in TaOx based memristors is proposed and demonstrated, by homogenizing the filament growth/dissolution rate via the introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface.

TL;DR: Evidence of oxygen ion migration and accumulation in HfO2 is shown by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments.

TL;DR: The first demonstration of an optofluidic metamaterial is reported where resonant properties of every individual metamolecule can be continuously tuned at will using a microfluidic system.

TL;DR: In this paper, a junction depleted-modulation design was proposed to achieve equivalently abrupt tunnel junction of Si tunnel FETs, which can reliably and effectively achieve much steeper switching behavior and higher ON current without area penalty and special fabrication compared with traditional TFET.