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Rui Li

Researcher at University of Strathclyde

Publications -  107
Citations -  3078

Rui Li is an academic researcher from University of Strathclyde. The author has contributed to research in topics: Fault (power engineering) & Topology (electrical circuits). The author has an hindex of 24, co-authored 105 publications receiving 2149 citations. Previous affiliations of Rui Li include Florida State University & Shanghai Jiao Tong University.

Papers
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DC Fault Detection and Location in Meshed Multiterminal HVDC Systems Based on DC Reactor Voltage Change Rate

TL;DR: In this article, the change rate of the dc reactor voltage with predefined protection voltage thresholds is proposed to provide fast and accurate dc fault detection in a meshed multiterminal HVDC system.
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Optimized Operation of Current-Fed Dual Active Bridge DC–DC Converter for PV Applications

TL;DR: A design guideline for the CF-DAB converter applied to PV systems, as well as other applications with a wide input voltage variation, and an optimized operating mode is proposed to achieve the minimum root-mean-square transformer current.
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High-Frequency-Link-Based Grid-Tied PV System With Small DC-Link Capacitor and Low-Frequency Ripple-Free Maximum Power Point Tracking

TL;DR: In this paper, a grid-tied photovoltaic (PV) system consisting of modular current-fed dual-active-bridge (CF-DAB) dc-dc converter with cascaded multilevel inverter is proposed.
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Continuous Operation of Radial Multiterminal HVDC Systems Under DC Fault

TL;DR: In this article, the authors proposed the use of additional dc passive components and novel converter control combined with mechanical DCCBs to ensure that the healthy dc network can continue to operate without disruption during a dc fault on one dc branch.
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Dynamic on -State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

TL;DR: In this paper, a dynamic R DSON test board integrating both hard-and soft-switching test circuits is built, and two types of commercial GaN devices are tested and compared under hard and soft switching conditions by doublepulse and multipulse test modes, respectively.