R
Ryan McClintock
Researcher at Northwestern University
Publications - 110
Citations - 2918
Ryan McClintock is an academic researcher from Northwestern University. The author has contributed to research in topics: Avalanche photodiode & Quantum efficiency. The author has an hindex of 29, co-authored 110 publications receiving 2578 citations.
Papers
More filters
Journal ArticleDOI
High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
K. Mayes,Alireza Yasan,Ryan McClintock,D. Shiell,Shaban Ramezani Darvish,Patrick Kung,Manijeh Razeghi +6 more
TL;DR: In this paper, the authors demonstrate high-power AlGaN-based ultraviolet light-emitting diodes grown on sapphire with an emission wavelength of 280 nm using an asymmetric singlequantum-well active layer configuration on top of a high-quality ALGaN/AlN template layer.
Journal ArticleDOI
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
Alireza Yasan,Ryan McClintock,K. Mayes,D. Shiell,L. Gautero,Shaban Ramezani Darvish,Patrick Kung,Manijeh Razeghi +7 more
TL;DR: In this paper, the authors demonstrate 4.5 mW output power from AlGaN-based single quantum well ultraviolet light-emitting diodes at a very short wavelength of 267 nm in pulsed operation mode.
Journal ArticleDOI
AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%
TL;DR: In this paper, a high performance AlxGa1−xN-based solar-blind ultraviolet photodetector (PD) array grown on sapphire substrate is reported.
Journal ArticleDOI
High quantum efficiency AlGaN solar-blind p-i-n photodiodes
Ryan McClintock,Alireza Yasan,K. Mayes,D. Shiell,Shaban Ramezani Darvish,Patrick Kung,Manijeh Razeghi +6 more
TL;DR: In this paper, a back-illuminated solar-blind ultraviolet p-i-n photodetectors with a peak responsivity of 136 mA/W at 282 nm without bias were presented.
Journal ArticleDOI
Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes
TL;DR: Avalanche p-i-n photodiodes were fabricated on AlN templates for back illumination and a critical electric field of 2.73MV∕cm was estimated from the variation of the breakdown voltage with thickness.