R
Ryo Matsumura
Researcher at National Institute for Materials Science
Publications - 50
Citations - 324
Ryo Matsumura is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Annealing (metallurgy) & Germanium. The author has an hindex of 10, co-authored 46 publications receiving 274 citations. Previous affiliations of Ryo Matsumura include University of Tokyo & Kyushu University.
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High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization
TL;DR: In this article, the authors investigated the solid phase crystallization of amorphous-GeSn films on insulating substrates under a wide range of Sn concentrations (0% −20%), film thickness (30 −500nm), and annealing temperatures (380 −500
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Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth
TL;DR: In this article, the authors investigate the seeding rapid melting growth of narrow stripes with a-Ge/Sn/a-Ge stacked-structures to achieve laterally graded GeSn crystalline layers on Si substrates covered with SiO2 films.
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Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding
TL;DR: In this article, a technique for solid phase crystallization of amorphous GeSn (≤220°C) enhanced by Sn doping, and combined with a seeding technique induced by Sn melting (∼250°C), is presented.
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Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth
Ryo Matsumura,Yuki Tojo,Masashi Kurosawa,Masashi Kurosawa,Masashi Kurosawa,Taizoh Sadoh,Ichiro Mizushima,Masanobu Miyao +7 more
TL;DR: Laterally graded SiGe-on-insulator is the keystructure for next-generation Si-technology, which enables advanced device-arrays with various energy-band-gaps as well as 2-dimensional integration of functional-materials with various lattice-constants as discussed by the authors.
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Au-Sn Catalyzed Growth of Ge1-xSnx Nanowires: Growth Direction, Crystallinity, and Sn Incorporation.
TL;DR: The use of Au-Sn alloy catalysts instead of Au catalysts allows an easier understanding of Ge1-xSnx NW growth, and the effects of Sn at different concentrations in catalysts on growth direction, Sn incorporation and crystallinity of Ge 1-x Snx NWs can be clarified.