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Ryoichi Nakatani

Researcher at Osaka University

Publications -  203
Citations -  2297

Ryoichi Nakatani is an academic researcher from Osaka University. The author has contributed to research in topics: Magnetization & Magnetic domain. The author has an hindex of 24, co-authored 188 publications receiving 2108 citations. Previous affiliations of Ryoichi Nakatani include Hitachi.

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Magnetoresistance and Preferred Orientation in Fe-Mn/Ni-Fe/Cu/Ni-Fe Sandwiches with Various Buffer Layer Materials

TL;DR: In this paper, the magnetoresistance effects and film structures have been investigated in [Fe-Mn/Ni-Fe/Cu/Ni−Fe/buffer layer/Si] sandwiches with various buffer layer materials.
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Exchange Coupling between Antiferromagnetic Mn–Ir and Ferromagnetic Ni–Fe Layers

TL;DR: In this article, exchange couplings between antiferromagnetic Mn-Ir and ferromagnetic Ni-Fe layers have been investigated while varying the Mn−Ir composition, and the maximum exchange coupling field of 3.2 kA/m was obtained for Mn−20 at.%Ir(59 nm)/Ni−Fe(20 nm)/Zr(10 nm).
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Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films

TL;DR: In this article, the authors reported the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films.
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Field-dependent thermoelectric power and thermal conductivity in multilayered and granular giant magnetoresistive systems

TL;DR: Measurements of the thermoelectric power (TEP) and thermal conductivity on a wide variety of granular and multilayer GMR systems find the strong magnetic field dependences of both the TEP and the Thermal conductivity are found to be closely related to the magnetoresistance.
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Detection and In Situ Switching of Unreversed Interfacial Antiferromagnetic Spins in a Perpendicular-Exchange-Biased System

TL;DR: Experimental evidence that the unreversed uncompensated Cr spins exist at the Co/α-Cr(2)O(3) interface is provided and an in situ switching of the interfacial Cr spins and correspondingly a reversal of the exchange bias without interfacial atomic diffusion are demonstrated.