About Dendrimers: Structure, Physical Properties, and Applications

Dendrimers in biomedical applications--reflections on the field.

One of the most exciting developments in the areas of catalysis, organometallic chemistry, and polymer science in recent years has been the intense exploration and commercialization of new polymerization technologies based on single-site and metallocene coordination olefin polymerization catalysts.1 The vast number of specifically designed/synthesized transition metal complexes (catalyst precursors) and main-group organometallic compounds (cocatalysts) allows unprecedented control over polymer microstructure, the generation of new polymer architectures, and the development of new polymerization reactions. Commercialization of new generations of single-site and metallocene catalyst-based technologies has provided the multibillion pound per year polyolefins industry with the ability to deliver a wide range of new and innovative olefin-based polymers having improved properties.2-4 The intense industrial activity in the field and the challenges to our basic understanding that have come to light have in turn 1391 Chem. Rev. 2000, 100, 1391−1434

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Cocatalysts for Metal-Catalyzed Olefin Polymerization: Activators, Activation Processes, and Structure−Activity Relationships

Polymer nanocomposites based on functionalized carbon nanotubes

The ever increasing requirements for electrical performance of on-chip wiring has driven three major technological advances in recent years. First, copper has replaced Aluminum as the new interconnect metal of choice, forcing also the introduction of damascene processing. Second, alternatives for SiO2 with a lower dielectric constant are being developed and introduced in main stream processing. The many new resulting materials needs to be classified in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. Third, in an attempt to lower the dielectric constant even more, porosity is being introduced into these new materials. The study of processes such as plasma interactions and swelling in liquid media now becomes critical. Furthermore, pore sealing and the deposition of a thin continuous copper diffusion barrier on a porous dielectric are of prime importance. This review is an attempt to give an overview of the classification, the character...

Low dielectric constant materials for microelectronics

Dendritic macromolecules: synthesis of starburst dendrimers

For faster, smaller, and higher performance integrated circuits, a low dielectric constant insulator is required to replace silicon dioxide. Here the properties of a new dielectric—SiLK resin, a solution of a low-molecular-weight aromatic thermosetting polymer—are reviewed and examples of its application in the fabrication of interconnect structures, such as the one shown in the Figure, are given.

Development of a Low‐Dielectric‐Constant Polymer for the Fabrication of Integrated Circuit Interconnect

Benzocyclobutene (DVS-BCB) polymer as an interlayer dielectric (ILD) material

This paper describes the first synthesis of a new class of topological macromolecules which we refer to as “starburst polymers.” The fundamental building blocks to this new polymer class are referred to as “dendrimers.” These dendrimers differ from classical monomers/oligomers by their extraordinary symmetry, high branching and maximized (telechelic) terminal functionality density. The dendrimers possess “reactive end groups” which allow (a) controlled moelcular weight building (monodispersity), (b) controlled branching (topology), and (c) versatility in design and modification of the terminal end groups. Dendrimer synthesis is accomplished by a variety of strategies involving “time sequenced propagation” techniques. The resulting dendrimers grow in a geometrically progressive fashion as shown: Chemically bridging these dendrimers leads to the new class of macromolecules—”starburst polymers” (e.g., (A)n, (B)n, or (C)n).

A New Class of Polymers : Starbust-Dendritic Macromolecules

A novel polymer has been developed for use as a thin film dielectric in the interconnect structure of high density integrated circuits. The coating is applied to the substrate as an oligomeric solution, SiLK, using conventional spin coating equipment and produces highly uniform films after curing at 400 °C to 450 °C. The oligomeric solution, with a viscosity of ca. 30 cPs, is readily handled on standard thin film coating equipment. Polymerization does not require a catalyst. There is no water evolved during the polymerization. The resulting polymer network is an aromatic hydrocarbon with an isotropie structure and contains no fluorine. The properties of the cured films are designed to permit integration with current ILD processes. In particular, the rate of weight-loss during isothermal exposures at 450 °C is ca. 0.7 wt.%/hour. The dielectric constant of cured SiLK has been measured at 2.65. The refractive index in both the in-plane and out-of-plane directions is 1.63. The flow characteristics of SiLK lead to broad topographic planarization and permit the filling of gaps at least as narrow as 0.1 fum. The glass transition temperature for the fully cured film is greater than 490 °C. The coefficient of thermal expansivity is 66 ppm/°C below the glass transition temperature. The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature. The fracture toughness measured on thin films is 0.62 MPa m ½. Thin coatings absorb less than 0.25 wt.% water when exposed to 80% relative humidity at room temperature.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400263513

S. J. Martin

Papers

Dendritic macromolecules: synthesis of starburst dendrimers

Development of a Low‐Dielectric‐Constant Polymer for the Fabrication of Integrated Circuit Interconnect

Benzocyclobutene (DVS-BCB) polymer as an interlayer dielectric (ILD) material

A New Class of Polymers : Starbust-Dendritic Macromolecules

Silk Polymer Coating with Low Dielectric Constant and High Thermal Stability for Ulsi Interlayer Dielectric