S
S. Rigo
Researcher at École Normale Supérieure
Publications - 11
Citations - 473
S. Rigo is an academic researcher from École Normale Supérieure. The author has contributed to research in topics: Oxide & Thin film. The author has an hindex of 8, co-authored 11 publications receiving 469 citations.
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Journal ArticleDOI
Oxidation of silicon
TL;DR: In this paper, a unified model for silicon oxidation in dry and wet conditions is presented, which goes beyond the current models of kinetics and of ellipsometric and spectroscopic data by explicitly addressing the issues raised by isotope experiments.
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The thermal oxidation of silicon the special case of the growth of very thin films
TL;DR: In this article, the growth of very thin oxide films exhibits particular features which are discussed in this paper, and the effect of hydrogenated impurities is also discussed; this difference is possibly associated with the transport of oxygen atoms through the silica network.
Journal ArticleDOI
An 18O Study of the Oxidation Mechanism of Silicon in Dry Oxygen
François Rochet,B. Agius,S. Rigo +2 more
TL;DR: The mechanism of thermal oxidation of silicon in dry oxygen was studied using 18O as a tracer in this paper, where fixed 18O is found near the interface and near the external surface of the oxide (18O FNE).
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An 18O Study of Cooperative Diffusion and Chemical Reaction during Thermal Treatments of Silica Films in Water Vapor
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Structural evolution of very thin silicon oxide films during thermal growth in dry oxygen
TL;DR: In this paper, the structural characteristics of very thin silicon oxide films thermally grown (at 930°C, 10 Torr) in 18O enriched dry oxygen for times ranging from 0.5 to 22.5 h (corresponding to equivalent thicknesses ranging from 3.2 to 20.8 nm).