S
S.S. Gong
Researcher at Motorola
Publications - 1
Citations - 37
S.S. Gong is an academic researcher from Motorola. The author has contributed to research in topics: Gate oxide & Oxide. The author has an hindex of 1, co-authored 1 publications receiving 36 citations.
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Evaluation of Q/sub bd/ for electrons tunneling from the Si/SiO/sub 2/ interface compared to electron tunneling from the poly-Si/SiO/sub 2/ interface
TL;DR: In this paper, the authors correlate the higher n-well Q/sub bd/ to smooth capacitor oxide/substrate interfaces and minimized grain boundary cusps at the poly-Si gate/oxide interfaces, confirming that Fowler-Nordheim tunneling is the dominant current conduction mechanism through the oxide.