Showing papers by "Sabina Ronchin published in 2013"

Silicon buried channels for pixel detector cooling

Abstract: The support and cooling structures add important contributions to the thickness, in radiation length, of vertex detectors. In order to minimize the material budget of pixel sensors, we developed a new approach to integrate the cooling into the silicon devices. The microchannels are formed in silicon using isotropic SF 6 plasma etching in a DRIE (deep reactive ion etcher) equipment. Due to their peculiar profiles, the channels can be sealed by a layer of a PECVD silicon oxide. We have realized on a silicon wafer microchannels with different geometries and hydraulic diameters. We describe the main fabrication steps of microchannels with focus on the channel definition. The experimental results are reported on the thermal characterization of several prototypes, using a mixture of glycol and water as a liquid coolant. The prototypes have shown high cooling efficiency and high-pressure breaking strength.

Hybrid detectors for neutrons combining phenyl-polysiloxanes with 3D silicon detectors

Abstract: We report on the initial results of a research project aimed at the development hybrid detectors for fast neutrons by combining a phenyl-polysiloxane-based converter with a 3D silicon detector. To this purpose, new 3D sensor structures have been designed, fabricated and electrically tested, showing low depletion voltage and good leakage current. Moreover, the radiation detection capability of 3D sensors was tested by measuring the signals recorded from alpha particles, gamma rays, and pulsed lasers. The converter has been poured into the 3D cavities with excellent coupling, as confirmed by cross-section SEM analyses. Preliminary tests with neutrons have been carried out on the first hybrid detector prototypes at the CN accelerator of INFN LNL. The device design and technology are discussed, along with the first results from the electrical and functional characterization.

Hybrid detectors of neutrons based on 3D silicon sensors with PolySiloxane converter

Abstract: We report on the first prototypes of hybrid detectors for neutrons from the INFN HYDE project. Devices consist of 3D silicon sensors coupled to PolySiloxane-based converters. The sensor design and fabrication technology are presented, along with initial results from the functional characterization of the devices in response to radioactive sources and neutron beams of different energies.

Development of thin pixel detectors on epitaxial silicon for HEP experiments

Abstract: The foreseen luminosity of the new experiments in High Energy Physics will require that the innermost layer of vertex detectors will be able to sustain fluencies up to 10 16 n eq /cm 2 . Moreover, in many experiments there is a demand for the minimization of the material budget of the detectors. Therefore, thin pixel devices fabricated on n-type silicon are a natural choice to fulfill these requirements due to their rad-hard performances and low active volume. We present an R&D activity aimed at developing a new thin hybrid pixel device in the framework of PANDA experiments. The detector of this new device is a p-on-n pixel sensor realized starting from epitaxial silicon wafers and back thinned up to 50–100 μm after process completion. We present the main technological steps and some electrical characterization on the fabricated devices before and after back thinning and after bump bonding to the front-end electronics.