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Samantha L. Hawken
Researcher at University of Southampton
Publications - 4
Citations - 120
Samantha L. Hawken is an academic researcher from University of Southampton. The author has contributed to research in topics: Thin film & Chemical vapor deposition. The author has an hindex of 3, co-authored 4 publications receiving 82 citations.
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Journal ArticleDOI
Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices
Fionán Davitt,Hugh G. Manning,Fred Robinson,Samantha L. Hawken,Subhajit Biswas,Nikolay Petkov,Maart van Druenen,John J. Boland,Gillian Reid,Justin D. Holmes +9 more
TL;DR: In this paper, the potential of resistive memory devices in resistive memories has been investigated using crystallographically controlled synthesis of SnSe nanowires, which has been published in final form at 10.1002/admi.202000474.
Journal ArticleDOI
Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films.
Chitra Gurnani,Samantha L. Hawken,Andrew L. Hector,Ruomeng Huang,Marek Jura,William Levason,James Perkins,Gillian Reid,Gavin B. G. Stenning +8 more
TL;DR: The molecular Sn(iv) complexes have been prepared in good yield from reaction of SnCl4 with the appropriate chalcogenoether ligand in anhydrous hexane and employed as single source precursors for the low pressure chemical vapour deposition of the corresponding tin dichalcogenside thin films.
Journal ArticleDOI
Compositionally tunable ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films via low pressure chemical vapour deposition
Sophie L. Benjamin,Sophie L. Benjamin,C.H. de Groot,Chitra Gurnani,Chitra Gurnani,Samantha L. Hawken,Andrew L. Hector,Ruomeng Huang,Marek Jura,William Levason,Eleanor Reid,Gillian Reid,Stephen P. Richards,Gavin B. G. Stenning +13 more
TL;DR: The inherently rapid ligand substitution kinetics associated with the novel and chemically compatible precursors, [MCl3(EnBu2)3] (M = Sb, Bi; E = Se, Te), enable CVD growth of ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films with very good compositional, structural and morphological control, for the first time as mentioned in this paper.
Journal ArticleDOI
[Ge(TenBu)4] - a single source precursor for the chemical vapour deposition of germanium telluride thin films.
Samantha L. Hawken,Ruomeng Huang,C.H. de Groot,Andrew L. Hector,Marek Jura,William Levason,Gillian Reid,Gavin B. G. Stenning +7 more
TL;DR: Reaction of activated germanium with nBu2Te2 in THF solution was shown to be more effective for the preparation of the germania(iv) tellurolate compound, [Ge(TenBu)4], than reaction of GeCl4 with LiTenBu in a 1 : 4 molar ratio in THf.