S
Sang Bok Kim
Researcher at Harvard University
Publications - 28
Citations - 1890
Sang Bok Kim is an academic researcher from Harvard University. The author has contributed to research in topics: Thin film & Atomic layer deposition. The author has an hindex of 14, co-authored 27 publications receiving 1633 citations. Previous affiliations of Sang Bok Kim include Seoul National University.
Papers
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Journal ArticleDOI
Overcoming Efficiency Limitations of SnS‐Based Solar Cells
Prasert Sinsermsuksakul,Leizhi Sun,Sang Woon Lee,Helen Hejin Park,Sang Bok Kim,Chuanxi Yang,Roy G. Gordon +6 more
TL;DR: In this article, loss mechanisms are systematically investigated and mitigated in solar cells based on p-type tin monosulfide, SnS, absorber layers combined with n-type zinc oxysulfide and Zn(O,S) layers that selectively transmit electrons, but block holes.
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Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer
Prasert Sinsermsuksakul,Katy Hartman,Sang Bok Kim,Jaeyeong Heo,Leizhi Sun,Helen Hejin Park,Rupak Chakraborty,Tonio Buonassisi,Roy G. Gordon +8 more
TL;DR: In this paper, a record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O,S).
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Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells
Yun Seog Lee,Jaeyeong Heo,Jaeyeong Heo,Sin Cheng Siah,Jonathan P. Mailoa,Riley E. Brandt,Sang Bok Kim,Roy G. Gordon,Tonio Buonassisi +8 more
TL;DR: In this paper, a tunable electron blocking layer was proposed to enhance the performance of an Earth-abundant metal-oxide solar-cell material with a 5 nm thick amorphous ternary metaloxide buffer layer.
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Improved Cu 2 O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction
Sang Woon Lee,Yun Seog Lee,Jaeyeong Heo,Sin Cheng Siah,Danny Chua,Riley E. Brandt,Sang Bok Kim,Jonathan P. Mailoa,Tonio Buonassisi,Roy G. Gordon +9 more
TL;DR: In this article, the authors proposed a method to control interface stoichiometry of Cu 2 O in situ by controlling the oxygen partial pressure during sputtering of a ZnO over-layer.
Journal ArticleDOI
Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells
Yun Seog Lee,Jaeyeong Heo,Jaeyeong Heo,Mark T. Winkler,Sin Cheng Siah,Sang Bok Kim,Roy G. Gordon,Tonio Buonassisi +7 more
TL;DR: In this article, the potential of a nitrogen-doped cuprous oxide (Cu2O:N) film as a p-type hole-transporting layer for photovoltaic devices was demonstrated.