Chuanxi Yang

TL;DR: In this article, loss mechanisms are systematically investigated and mitigated in solar cells based on p-type tin monosulfide, SnS, absorber layers combined with n-type zinc oxysulfide and Zn(O,S) layers that selectively transmit electrons, but block holes.

TL;DR: This device simultaneously provides spatially separated photonic far-field output and highly localized coherent plasmon modes with sub-diffraction-limited beam size.

TL;DR: In this article, the minority-carrier lifetime remains below 100 ps for all tested combinations of growth technique and post-growth processing, and thermal annealing in H2S gas increases the minority carrier lifetime, and oxidation of the surface reduces the surface recombination velocity.

TL;DR: In this paper, the authors simulate the photovoltaic device performance of various n-type contact material pairings with tin(II) sulfide (SnS), a p-type absorber.

TL;DR: The fabrication procedure for these record solar cells is described, the statistical distribution of the fabrication process is reported, and a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described.