Santino D. Carnevale

TL;DR: By dynamically adjusting the growth kinetics, it is possible to separate the nucleation and growth processes in spontaneously formed GaN nanowires using a two-step molecular beam epitaxy technique, and results indicate that a two step method allows access to a variety of kinetics at which nanowireucleation and adatom mobility are adjustable.

TL;DR: P polarization-induced conductivity without impurity doping provides a solution to the problem of conductivity uniformity in nanowires and nanoelectronics and opens a new field of polarization engineering in nanostructures that may be applied to other polar semiconductors.

TL;DR: A pathway for large-scale fabrication of solid state lighting and optoelectronics on metal foils or sheets is demonstrated and high-quality, vertically aligned GaN nanowires on molybdenum and titanium films are revealed.

TL;DR: If catalyst-free III-nitride nanowires are to be used to form polarization-doped heterostructures, then it is imperative to understand their mixed polarity and to design devices using thesenanowires accordingly.

TL;DR: In this article, the same authors demonstrate a pathway for large-scale fabrication of solid state lighting and optoelectronics on metal foils or sheets, which can be used to fabricate light emitting diodes (LEDs), lasers, solar cells and sensors.