S
Siddharth Rajan
Researcher at Ohio State University
Publications - 345
Citations - 13369
Siddharth Rajan is an academic researcher from Ohio State University. The author has contributed to research in topics: Heterojunction & Gallium nitride. The author has an hindex of 57, co-authored 321 publications receiving 10306 citations. Previous affiliations of Siddharth Rajan include University of California & General Electric.
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Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
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Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
Dante J. O'Hara,Tiancong Zhu,Amanda H. Trout,Adam Ahmed,Yunqiu Kelly Luo,Choong Hee Lee,Mark Brenner,Siddharth Rajan,Jay Gupta,David W. McComb,Roland Kawakami,Roland Kawakami +11 more
TL;DR: The observation of room temperature ferromagnetism in manganese selenide (MnSe x) films grown by molecular beam epitaxy (MBE) holds promise for potential applications in energy efficient information storage and processing.
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High-power AlGaN/GaN HEMTs for Ka-band applications
Tomas Palacios,Arpan Chakraborty,Siddharth Rajan,Christiane Poblenz,Stacia Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +7 more
TL;DR: In this paper, the authors report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD).
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p-type doping of MoS2 thin films using Nb
Masihhur R. Laskar,Digbijoy N. Nath,Lu Ma,Edwin W. Lee,Choong Hee Lee,Thomas F. Kent,Zihao Yang,Rohan Mishra,Manuel A. Roldan,Juan Carlos Idrobo,Sokrates T. Pantelides,Stephen J. Pennycook,Roberto C. Myers,Yiying Wu,Siddharth Rajan +14 more
TL;DR: In this paper, the first demonstration of substitutional p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS2 was reported, where Niobium was found to act as an efficient acceptor up to relatively high density in MoS 2 films.
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Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang,Adam T. Neal,Zhanbo Xia,Chandan Joishi,Chandan Joishi,Jared M. Johnson,Yuanhua Zheng,Sanyam Bajaj,Mark Brenner,Donald L. Dorsey,Kelson D. Chabak,Gregg H. Jessen,Jinwoo Hwang,Shin Mou,Joseph P. Heremans,Siddharth Rajan +15 more
TL;DR: In this article, a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O 3 interface through modulation doping was demonstrated.