S
Satoshi Iba
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 20
Citations - 335
Satoshi Iba is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Quantum well & Lasing threshold. The author has an hindex of 9, co-authored 20 publications receiving 316 citations. Previous affiliations of Satoshi Iba include Nara Institute of Science and Technology.
Papers
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Room temperature circularly polarized lasing in an optically spin injected vertical-cavity surface-emitting laser with (110) GaAs quantum wells
TL;DR: In this article, a vertical-cavity surface-emitting laser (VCSEL) with GaAs/AlGaAs quantum wells (QWs) was fabricated and the lasing properties of the VCSEL under optical spin injection were characterized.
Journal ArticleDOI
Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection
TL;DR: In this article, a vertical-cavity surface-emitting laser (VCSEL) based on (110) InGaAs/GaAs multiple quantum wells (MQWs) has been demonstrated at 77 K and room temperature.
Posted Content
Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium
S. Sharma,Aurélie Spiesser,Saroj P. Dash,Satoshi Iba,S. Watanabe,S. Watanabe,B. J. van Wees,Hidekazu Saito,Shinji Yuasa,Ron Jansen +9 more
TL;DR: In this article, the magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies with the thickness of the tunnel oxide.
Journal ArticleDOI
Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium
S. Sharma,Aurélie Spiesser,Saroj P. Dash,Satoshi Iba,S. Watanabe,S. Watanabe,B. J. van Wees,Hidekazu Saito,Shinji Yuasa,Ron Jansen +9 more
TL;DR: In this article, the magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies with the thickness of the tunnel oxide.
Journal ArticleDOI
Spin Accumulation and Spin Lifetime in p-Type Germanium at Room Temperature
TL;DR: In this article, the electrical creation and detection of spin accumulation in p-type Ge were successfully demonstrated at room temperature by spin-polarized tunneling in epitaxial Fe/MgO contacts on Ge with a hole concentration of 8×1018 cm-3.