Saroj P. Dash

TL;DR: In this article, the authors demonstrate room-temperature electrical injection of spin polarization into n-type and p-type silicon from a ferromagnetic tunnel contact, spin manipulation using the Hanle effect and the electrical detection of the induced spin accumulation.

TL;DR: In this article, the authors present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride and extract mobilities as high as 125'000 cm2 V−1 s−1 at room temperature and 275'000cm2 V −1 s −1 at 4.2'K.

TL;DR: In this paper, the authors present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride and extract mobilities as high as 125 000 cm^2/V/s at room temperature and 275 000 cm 2/V /s at 4.2 K. The excellent quality is supported by the early development of the nu = 1 quantum Hall plateau at a magnetic field of 5 T and temperature of 4 2 K.

TL;DR: In this article, the authors review current challenges and perspectives in graphene spintronics, which is one of the most promising directions of innovation, given its room-temperature long-spin lifetimes and the ability of graphene to be easily interfaced with other classes of materials (ferromagnets, magnetic insulators, semiconductors, oxides, etc), allowing proximity effects to be harvested.

TL;DR: The synthesis of large area MoS2 thin films on insulating substrates (SiO2/Si and Al2O3) with different surface morphology via vapor phase deposition by varying the growth temperatures sheds light on theMoS2-water interaction that is important for the development of devices based on MoS 2 coated surfaces for microfluidic applications.