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Saurabh Soni

Researcher at University of Groningen

Publications -  11
Citations -  259

Saurabh Soni is an academic researcher from University of Groningen. The author has contributed to research in topics: Molecular electronics & Molecular wire. The author has an hindex of 7, co-authored 11 publications receiving 142 citations.

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Charge transport through molecular ensembles: Recent progress in molecular electronics

TL;DR: In this article, the authors focus on molecular ensembles, where the individual molecules of a monolayer each span two electrodes, and the top electrode realizes an individual junction by defining its geometry and a second molecule interface.
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Two‐Terminal Molecular Memory through Reversible Switching of Quantum Interference Features in Tunneling Junctions

TL;DR: Large‐area molecular tunneling junctions comprising self‐assembled monolayers of redox‐active molecules are described that exhibit two‐terminal bias switching to create nonvolatile memory in proto‐devices using eutectic Ga–In as the top contact.
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Controlling destructive quantum interference in tunneling junctions comprising self-assembled monolayers via bond topology and functional groups

TL;DR: Three different benzodithiophene derivatives were designed to isolate the effects of bond topology from that of functional groups in quantum interference to examine the role of the quinone functionality separate from cross-conjugation.
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Understanding the Role of Parallel Pathways via In-Situ Switching of Quantum Interference in Molecular Tunneling Junctions.

TL;DR: The modulation of tunneling probabilities in molecular junctions by switching one of two parallel intramolecular pathways is described by converting a cross‐conjugated carbonyl carbon into a trivalent carbocation, which replaces destructive quantum interference with a symmetrical resonance, causing an increase in transmission in the bias window.
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Mechanically and Electrically Robust Self-Assembled Monolayers for Large-Area Tunneling Junctions

TL;DR: The mechanical robustness of T4C4 manifests as an increased tolerance to high bias in large-area EGaIn junctions suggesting that electrostatic pressure plays a significant role in the shorting of molecular junctions at high bias.