抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.

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Fundamentals of zinc oxide as a semiconductor

We have performed a comprehensive first-principles investigation of native point defects in ZnO based on density functional theory within the local density approximation (LDA) as well as the $\mathrm{LDA}+U$ approach for overcoming the band-gap problem. Oxygen deficiency, manifested in the form of oxygen vacancies and zinc interstitials, has long been invoked as the source of the commonly observed unintentional $n$-type conductivity in ZnO. However, contrary to the conventional wisdom, we find that native point defects are very unlikely to be the cause of unintentional $n$-type conductivity. Oxygen vacancies, which have most often been cited as the cause of unintentional doping, are deep rather than shallow donors and have high formation energies in $n$-type ZnO (and are therefore unlikely to form). Zinc interstitials are shallow donors, but they also have high formation energies in $n$-type ZnO and are fast diffusers with migration barriers as low as $0.57\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$; they are therefore unlikely to be stable. Zinc antisites are also shallow donors but their high formation energies (even in Zn-rich conditions) render them unlikely to be stable under equilibrium conditions. We have, however, identified a different low-energy atomic configuration for zinc antisites that may play a role under nonequilibrium conditions such as irradiation. Zinc vacancies are deep acceptors and probably related to the frequently observed green luminescence; they act as compensating centers in $n$-type ZnO. Oxygen interstitials have high formation energies; they can occur as electrically neutral split interstitials in semi-insulating and $p$-type materials or as deep acceptors at octahedral interstitial sites in $n$-type ZnO. Oxygen antisites have very high formation energies and are unlikely to exist in measurable concentrations under equilibrium conditions. Based on our results for migration energy barriers, we calculate activation energies for self-diffusion and estimate defect-annealing temperatures. Our results provide a guide to more refined experimental studies of point defects in ZnO and their influence on the control of $p$-type doping.

Native point defects in ZnO

The canonical example of a quantum-mechanical two-level system is spin. The simplest picture of spin is a magnetic moment pointing up or down. The full quantum properties of spin become apparent in phenomena such as superpositions of spin states, entanglement among spins, and quantum measurements. Many of these phenomena have been observed in experiments performed on ensembles of particles with spin. Only in recent years have systems been realized in which individual electrons can be trapped and their quantum properties can be studied, thus avoiding unnecessary ensemble averaging. This review describes experiments performed with quantum dots, which are nanometer-scale boxes defined in a semiconductor host material. Quantum dots can hold a precise but tunable number of electron spins starting with 0, 1, 2, etc. Electrical contacts can be made for charge transport measurements and electrostatic gates can be used for controlling the dot potential. This system provides virtually full control over individual electrons. This new, enabling technology is stimulating research on individual spins. This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist’s viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to electrical measurements. Furthermore, experimental techniques are discussed that allow for 1 the rotation of an electron spin into a superposition of up and down, 2 the measurement of the quantum state of an individual spin, and 3 the control of the interaction between two neighboring spins by the Heisenberg exchange interaction. Finally, the physics of the relevant relaxation and dephasing mechanisms is reviewed and experimental results are compared with theories for spin-orbit and hyperfine interactions. All these subjects are directly relevant for the fields of quantum information processing and spintronics with single spins i.e., single spintronics.

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Spins in few-electron quantum dots

Photoluminescent, undoped ZnO films have been fabricated using spray pyrolysis of zinc nitrate solution The luminescent films had a polycrystalline hexagonal wurtzite type structure with no preferred orientation Photoluminescence intensity was critically dependent on substrate temperature during spray pyrolysis and on post-annealing temperature Green, photoluminescent films possessed a porous structure while orange films possessed a close packed granular morphology Green luminescence appears to be due to oxygen vacancies in a layer just below the crystallite surface

Fabrication of green and orange photoluminescent, undoped ZnO films using spray pyrolysis

Undoped ZnO films were deposited by spray pyrolysis using aqueous zinc nitrate solution at different substrate temperatures. The effect of the growth temperature on the structural, optical, electrical, and relaxation properties has been studied. It was found that there was a critical temperature Tc=180 °C below which the thermal decomposition to ZnO did not occur or was incomplete. Films grown above Tc showed strong preferred orientation of polycrystals along the c-axis, while the films grown at Tc or below showed a powder-like, non-oriented polycrystalline structure when they were converted afterwards to zinc oxide by annealing. A slight increase of the optical band gap was observed for as-prepared films as the substrate temperature was decreased near the critical temperature. Annealing brought all the samples to the same band gap 3.30 eV measured at a half height of the maximum absorption. After illumination, the steady-state photoconductivity decayed very slowly with a time constant of about a week for...

Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution

The relative intensities of the green and blue luminescence of a ZnO film was shown to depend on the excitation regime. Time-resolved and steady-state luminescence were studied along with photoconductivity transients. Under continuous excitation the film emitted green light, while under pulsed excitation the luminescence was either blue or green, depending on the intensity of the excitation pulse. The intensity of the blue component depended linearly on the pulse intensity while the green intensity followed a sublinear power law dependence with the exponent α=1/3. The transient luminescence exhibited fast (below nanosecond) and slow (microsecond) decay components at room temperature. The fast component was ascribed to interband exciton recombination, and the slow component was attributed to an electron-hole recombination involving a donor-acceptor complex, which most likely consisted of oxygen and zinc vacancies. In this model, the complex can emit light only when it is activated, i.e., oxygen vacancy is ...

Time-resolved luminescence and photoconductivity of polycrystalline ZnO films

Slow photoconductivity transients were comprehensively studied in ZnO films prepared by spray pyrolysis of the zinc-nitrate solution. Surface charge controlled the film conductivity, and it was possible to reversibly change the conductivity by many orders of magnitude using short-term annealing in hydrogen and oxygen. Under illumination, the conductivity of as-grown films may increase by several orders of magnitude, depending on the dark conductivity. Photoconductivity was due to the capture of nonequilibrium holes at surface oxygen states to produce an equivalent number of excess electrons in the conduction band. Reverse process of the photoconductivity relaxation is determined by an electron tunneling mechanism to the surface oxygen states.

Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films

Individual and coupled quantum dots containing one or two electrons have been realized and are regarded as components for future quantum information circuits. In this Letter we map out experimentally the stability diagram of the few-electron triple dot system, the electron configuration map as a function of the external tuning parameters, and reveal experimentally for the first time the existence of quadruple points, a signature of the three dots being in resonance. In the vicinity of these quadruple points we observe a duplication of charge transfer transitions related to charge and spin reconfigurations triggered by changes in the total electron occupation number. The experimental results are largely reproduced by equivalent circuit analysis and Hubbard models. Our results are relevant for future quantum mechanical engineering applications within both quantum information and quantum cellular automata architectures.

Sergei Studenikin

Papers

Fabrication of green and orange photoluminescent, undoped ZnO films using spray pyrolysis

Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution

Time-resolved luminescence and photoconductivity of polycrystalline ZnO films

Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films

Stability diagram of a few-electron triple dot.