Serwan Asaad

TL;DR: In this article, the authors present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 1/m in the quantum regime, and they use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to Nb TiN deposition to optimize the metal-substrate interface and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields.

TL;DR: In this paper, microwave-frequency NbTiN resonators on silicon have been presented, achieving internal quality factors above 1 M in the quantum regime, using two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbNiN deposition to optimize the metal-substrate interface, and deep reactive ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields.

TL;DR: In this article, the authors demonstrate coherent quantum control of a single 123Sb (spin-7/2) nucleus using localized electric fields produced within a silicon nanoelectronic device.

TL;DR: In this article , the authors demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device, and demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity.

TL;DR: In this article, a vector switch matrix enables selective broadcasting of input pulses to multiple transmons with individual tailoring of pulse quadratures for each, as required to minimise the effects of leakage on weakly anharmonic qubits.