Showing papers by "Seydi Doğan published in 2009"
TL;DR: In this article, the concept of barrier inhomogeneity at the metal/semiconductor interface through a Gaussian distribution function was introduced and the basic diode parameters such as ideality factor and barrier height were extracted from electrical measurements.
Abstract: Current–voltage (I–V) characteristics of Au/Ni/n-GaN Schottky diodes have been measured in 40–320 K temperature range, and analyzed in terms of thermionic emission theory by incorporating the concept of barrier inhomogeneity at the metal/semiconductor interface through a Gaussian distribution function. The basic diode parameters such as ideality factor and barrier height were consequently extracted from electrical measurements. It was seen that ideality factors increased and barrier heights decreased with the decreasing temperature. Both the barrier height ( Φ ¯ b ) and the ideality factor (n) exhibit abnormal temperature dependence and are explained by invoking three sets of Gaussian distributions of barrier heights at 320–160 K, 160–80 K, and 80–40 K. An experimental barrier height (BH) Φap value of about 0.963 eV was obtained for the Au/Ni/n-GaN Schottky diode at the room temperature (300 K). From the temperature-dependent I–V characteristics of the Ni/Au/n-GaN contact, that is, Φ ¯ bo and A* as 1.38±0.02, 0.87±0.02 and 0.51±0.02 eV; 47.91±2, 12.44±0.5 and 46.72±2 A/cm2 K2, respectively, have been calculated from a modified ln(I0/T2)−q2σs2/2k2T2 vs. 1/T plot for the three temperature regions.
60 citations
TL;DR: In this article, the authors used deep level transient spectroscopy (DLTS) to investigate deep levels in Ni/n-type 6H-SiC Schottky barrier diode.
13 citations
TL;DR: In this article, the Schottky barrier height of Au-Be/p-InSe:Cd SBDs has been determined from the experimental linear relationship between barrier heights and ideality factors.
10 citations
TL;DR: In this paper, temperature-dependent Hall effect measurements were carried out at an N-doped ZnO thin film grown by the reactive sputtering method onto (001) Si substrate before and after being vacuum annealed at 900 °C.
Abstract: Temperature-dependent Hall effect measurements were carried out at an N-doped ZnO thin film grown by the reactive sputtering method onto (001) Si substrate before and after being vacuum annealed at 900 °C. p-Type ZnO thin film was obtained with a relatively high mobility of ~60 cm2 V−1 s−1, a high carrier concentration of 2.5×1017 cm−3 and a low resistivity of 0.4 Ω cm. After vacuum annealing, the temperature dependence of electrical parameters such as mobility and carrier concentration showed highly different characteristics. Time-resolved photoluminescence (TRPL), PL and x-ray diffraction measurements (XRD) were performed after the annealing process to check whether the high-temperature annealing can remove the ZnO film on Si or not. The PL measurement shows band-to-band recombination at 360 nm and TRPL shows the exciton recombination lifetime to be 571.7 ps. The XRD measurement reveals highly preferred c-axis (0002) orientation. Activation energies were calculated using the ln σ versus 1000 T−1 plot to be 20 meV for the as-grown and 24 and 6.8 meV after the vacuum annealing process.
8 citations