Shahzeb Malik

TL;DR: In this paper, an analytical model for the analysis of internal quantum efficiency as well as light output power of GaN-based light-emitting diodes by introducing the polarization factor, which accounts for the polarization fields in the active region, in the standard ABC model was presented.

TL;DR: In this paper, the performance of AlGaN-based UVB LEDs for the suppression of efficiency droop as well as for the enhancement of hole injection in the multiquantum wells (MQWs) was numerically investigated.

TL;DR: In this article, the performance of green light-emitting diodes with specially designed AlGaN electron blocking layer is numerically investigated and it is shown that applying proposed electron blocking layers, the injection of holes inside the active region can be improved.

TL;DR: Different problems which lead to low external quantum efficiency (EQE) of UV LEDs are reported and various state-of-the-art reported external quantum efficiencies, light output power, and peak emission wavelengths in the three wavelength regimes of ultraviolet i.e. UV-A, UV-B, and UV-C LEDs are summarized.

TL;DR: In this paper, an anti-trapezoidal quaternary electron blocking layer (EBL) was proposed to improve radiative recombination, which is responsible for significant enhancement in IQE and remarkable reduction in efficiency droop.