Munaza Munsif

TL;DR: In this paper, the quantum efficiency of green light-emitting devices in both the blue and the red parts of the emission spectrum has been studied, and significant progress has been made in the advancement of light emitting devices.

TL;DR: In this paper, an analytical model for the analysis of internal quantum efficiency as well as light output power of GaN-based light-emitting diodes by introducing the polarization factor, which accounts for the polarization fields in the active region, in the standard ABC model was presented.

TL;DR: In this paper, the influence of zigzag-shaped quantum well in green GaN-based light-emitting diode was investigated and it was shown that the droop onset, efficiency droop, internal quantum efficiency, light output power and radiative recombination rate is significantly improved due to strong hole confinement in the indium regions in the proposed quantum well.

TL;DR: In this article, the performance of green light-emitting diodes with specially designed AlGaN electron blocking layer is numerically investigated and it is shown that applying proposed electron blocking layers, the injection of holes inside the active region can be improved.

TL;DR: Different problems which lead to low external quantum efficiency (EQE) of UV LEDs are reported and various state-of-the-art reported external quantum efficiencies, light output power, and peak emission wavelengths in the three wavelength regimes of ultraviolet i.e. UV-A, UV-B, and UV-C LEDs are summarized.