다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31–0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/V·s, and an...

/pdf/phosphorene-an-unexplored-2d-semiconductor-with-a-high-hole-pehm34p0g2.pdf

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

There is still an ongoing effort to search for sustainable, clean and highly efficient energy generation to satisfy the energy needs of modern society. Among various advanced technologies, electrocatalysis for the oxygen evolution reaction (OER) plays a key role and numerous new electrocatalysts have been developed to improve the efficiency of gas evolution. Along the way, enormous effort has been devoted to finding high-performance electrocatalysts, which has also stimulated the invention of new techniques to investigate the properties of materials or the fundamental mechanism of the OER. This accumulated knowledge not only establishes the foundation of the mechanism of the OER, but also points out the important criteria for a good electrocatalyst based on a variety of studies. Even though it may be difficult to include all cases, the aim of this review is to inspect the current progress and offer a comprehensive insight toward the OER. This review begins with examining the theoretical principles of electrode kinetics and some measurement criteria for achieving a fair evaluation among the catalysts. The second part of this review acquaints some materials for performing OER activity, in which the metal oxide materials build the basis of OER mechanism while non-oxide materials exhibit greatly promising performance toward overall water-splitting. Attention of this review is also paid to in situ approaches to electrocatalytic behavior during OER, and this information is crucial and can provide efficient strategies to design perfect electrocatalysts for OER. Finally, the OER mechanism from the perspective of both recent experimental and theoretical investigations is discussed, as well as probable strategies for improving OER performance with regards to future developments.

Electrocatalysis for the oxygen evolution reaction: recent development and future perspectives

Preceding the current interest in layered materials for electronic applications, research in the 1960's found that black phosphorus combines high carrier mobility with a fundamental band gap. We introduce its counterpart, dubbed few-layer phosphorene, as a new 2D p-type material. Same as graphene and MoS2, phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct and appreciable band-gap that depends on the number of layers. Our transport studies indicate a carrier mobility that reflects its structural anisotropy and is superior to MoS2. At room temperature, our phosphorene field-effect transistors with 1.0 um channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/Vs, and an on/off ratio up to 1E4. We demonstrate the possibility of phosphorene integration by constructing the first 2D CMOS inverter of phosphorene PMOS and MoS2 NMOS transistors.

Phosphorene: A New 2D Material with High Carrier Mobility

Magnetism and ferroelectricity are essential to many forms of current technology, and the quest for multiferroic materials, where these two phenomena are intimately coupled, is of great technological and fundamental importance. Ferroelectricity and magnetism tend to be mutually exclusive and interact weakly with each other when they coexist. The exciting new development is the discovery that even a weak magnetoelectric interaction can lead to spectacular cross-coupling effects when it induces electric polarization in a magnetically ordered state. Such magnetic ferroelectricity, showing an unprecedented sensitivity to ap plied magnetic fields, occurs in 'frustrated magnets' with competing interactions between spins and complex magnetic orders. We summarize key experimental findings and the current theoretical understanding of these phenomena, which have great potential for tuneable multifunctional devices.

/pdf/multiferroics-a-magnetic-twist-for-ferroelectricity-40nmxke8g8.pdf

Multiferroics: a magnetic twist for ferroelectricity

PURPOSE:To improve an uniformity of a powder product and to simplify its manufacturing process by mixing a Ti raw material compound and a Zn raw material compound at a specific mixing ratio, calcining within a specific temp. range, and removing an unreacted zinc oxide in the calcining mixture by dissolution. CONSTITUTION:The Ti raw material compound and the Zn raw material compound are mixed at a mixing ratio indicated in a general formula nZnO.TiO2 (n is a real number >=1.5), subsequently the mixture is calcined at 800-1,200 deg.C to prepare a mixture of zinc dititanate and zinc oxide. After this calcined mixture is dispersed in a water, a hydrochloric acid, sulfric acid, etc., are added and the unreacted zinc oxide is dissolved and removed. In the above indicated formula, in the case of n 1,200 deg.C, a particle diameter of the zinc dititanate increases in size, the product having a high reflactivity in the UV area cannot be obtained, a temp. of <800 deg.C provides an unpractically slow reaction rate.

Manufacture of zinc dititanate finely devided grain powder for protection from ultraviolet ray

Doping effects on the charge ordered (CO) structure in RFe2O4 (R=Lu, Yb) were investigated by an energy-filtered transmission electron microscope (EF-TEM), in combination with conventional magnetic measurement. The repalcement of Cu2+ and Co2+ for Fe2+ in RFe2O4 (R=Lu, Yb) destroyed drastically the CO structure. In LuFeCuO4, the CO structure with q=1/3 1/3 1/2 disappear and short-ranged domains consisting of cationic ordering of Fe3+ and Cu2+ ions are formed, which gives rise to characteristic zigzag-shaped diffuse streaks with diffuse spots at the h/3-δ h/3-δ 0-type positions (h: integer, δ=0.06) in reciprocal space. In addition, the magnetic measurement revealed that LuFeCuO4 exhibits a magnetic transition around 50K, which is much lower than the Neel temperature of 250K in LuFe2O4. In YbFeCoO4, clusters consisting of Fe3+ and Co2+ in the triangular lattice are formed and give rise to honeycomb-shaped diffuse streaks.

http://iopscience.iop.org/article/10.1088/1742-6596/200/1/012128/pdf

Doping effect on charge ordered structure in RFe2O4 (R=Lu and Yb)

Diffusion Bonding and Interfacial Characterization of Sintered Fiber Bonded Silicon Carbide Ceramics Using Boron‐molybdenum Interlayers

We have investigated characteristic ferroelectric and structural antiphase domain structures in single crystals of hexagonal RMnO3 (R=Y, Ho, Lu, and Yb) by obtaining various electron diffraction patterns, dark-filed images and high-resolution lattice images. In the ferroelectric phase of RMnO3 characteristic domain structures consisting of six ferroelectric and structural antiphase domains, which can be identified as the “cloverleaf” pattern, is found in the (110) plane, in addition to the (001) plane, and are inherent to the ferroelectric phase of hexagonal RMnO3. In domain configuration with the cloverleaf pattern in the (110) plane, the structural antiphase boundaries are inclined to be parallel to the [001] direction.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427412004484

Ferroelectric and Structural Antiphase Domains in Hexagonal R MnO 3

Observation of magnetic domains is important in understanding the magnetic properties of magnetic materials and devices. In this study, we report that the magnetic domains of M-type hexaferrites with uniaxial anisotropy can be visualized via small-angle electron diffraction and Foucault imaging. The position of the diffraction pattern spots has the same period as that of magnetic domains in a Sc-substituted hexaferrite (BaFe$_{12-x-\delta}$Sc$_x$Mg$_\delta$O$_{19}$). Conversely, the spots were observed four times longer than the period of magnetic domains in hexaferrite without substitution (BaFe$_{12}$O$_{19}$), demonstrating the long-range order of the Bloch walls. When the specimen was tilted, the magnetic deflection effect, as well as the periodic spots of magnetic domains, occurred. Thus, we were able to visualize the magnetic domains with different magnetization directions and domain orientations by selecting deflection spots. The results indicate that the technique utilized in this study is useful in observing the magnetic materials with uniaxial anisotropy.

Shigeo Mori

Papers

Manufacture of zinc dititanate finely devided grain powder for protection from ultraviolet ray

Doping effect on charge ordered structure in RFe2O4 (R=Lu and Yb)

Diffusion Bonding and Interfacial Characterization of Sintered Fiber Bonded Silicon Carbide Ceramics Using Boron‐molybdenum Interlayers

Ferroelectric and Structural Antiphase Domains in Hexagonal R MnO 3

Observation of magnetic domains in uniaxial magnets via small-angle electron diffraction and Foucault imaging