S
Shih-Chia Lin
Researcher at University of Waterloo
Publications - 11
Citations - 217
Shih-Chia Lin is an academic researcher from University of Waterloo. The author has contributed to research in topics: NMOS logic & MOSFET. The author has an hindex of 4, co-authored 11 publications receiving 214 citations. Previous affiliations of Shih-Chia Lin include National Taiwan University.
Papers
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Book
Low-Voltage SOI CMOS VLSI Devices and Circuits
James B. Kuo,Shih-Chia Lin +1 more
TL;DR: This chapter discusses SOI CMOS Devices--Part I, PD SOI-Technology SPICE Models, and Fundamentals of SOICMOS Circuits.
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A closed-form back-gate-bias related inverse narrow-channel effect model for deep-submicron VLSI CMOS devices using shallow trench isolation
TL;DR: In this article, an analytical inverse narrow-channel effect threshold voltage model for shallow-trench-isolated (STI) CMOS devices using a conformal mapping technique to simplify the two-dimensional (2D) analysis is presented.
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Compact threshold-voltage model for short-channel partially-depleted (PD) SOI dynamic-threshold MOS (DTMOS) devices
TL;DR: In this article, a closed-form threshold-voltage model for short-channel partially-depleted (PD) SOI dynamic-threshold MOS (DTMOS) devices based on a quasi-two-dimensional (2-D) approach is presented.
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Analytical subthreshold current hump model for deep-submicron shallow-trench-isolated CMOS devices
TL;DR: In this paper, an analytical sub-threshold current hump model for deep-submicron shallow-trench-isolated CMOS devices was proposed to provide a prediction of the back gate bias related sub threshold current hump phenomenon.
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Closed-form analytical drain current model considering energy transport and self-heating for short-channel fully-depleted SOI NMOS devices with lightly-doped drain structure biased in strong inversion
Shih-Chia Lin,James B. Kuo +1 more
TL;DR: In this paper, a closed-form analytical drain current model considering energy transport and self-heating for short-channel fully-depleted (FD) SOI NMOS devices with lightly-doped drain (LDD) structure was presented.