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Low-Voltage SOI CMOS VLSI Devices and Circuits
James B. Kuo,Shih-Chia Lin +1 more
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This chapter discusses SOI CMOS Devices--Part I, PD SOI-Technology SPICE Models, and Fundamentals of SOICMOS Circuits.Abstract:
Preface. Acknowlegments. Introduction. SOI CMOS Devices--Part I. SOI CMOS Devices--Part II. Fundamentals of SOI CMOS Circuits. SOI CMOS Digital Circuits. SOI CMOS Analog Circuits. PD SOI-Technology SPICE Models. Index.read more
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Switch Circuit and Method of Switching Radio Frequency Signals
Mark L. Burgener,James S. Cable +1 more
TL;DR: In this paper, a fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements, which includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
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Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
Christopher N. Brindle,Michael A. Stuber,Dylan J. Kelly,Clint L. Kemerling,George P. Imthurn,Robert B. Welstand,Mark L. Burgener +6 more
TL;DR: In this article, a method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) was described, which can be adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFs, thereby yielding improvements in FET performance.
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Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
TL;DR: In this paper, a method and apparatus for use in a digitally tuning a capacitor in an integrated circuit device is described, which facilitates digitally controlling capacitance applied between a first and second terminal.
Patent
Integrated RF front end with stacked transistor switch
Mark L. Burgener,James S. Cable +1 more
TL;DR: In this article, an iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal, and a preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits and a fourway antenna switch to selectably couple a single antenna connection to any one of the four circuits.
Patent
Method and Apparatus Improving Gate Oxide Reliability by Controlling Accumulated Charge
Michael A. Stuber,Christopher N. Brindle,Dylan J. Kelly,Clint L. Kemerling,George P. Imthurn,Robert B. Welstand,Mark L. Burgener,Alexander Dribinsky,Tae Youn Kim +8 more
TL;DR: In this article, a method and apparatus for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques is presented.