Erbium-doped fiber amplifiers are modeled using the propagation and rate equations of a homogeneous two-level laser medium. Numerical methods are used to analyze the effects of optical modes and erbium confinement on amplifier performance, and to calculate both the gain and amplified spontaneous emission (ASE) spectra. Fibers with confined erbium doping are completely characterized from easily measured parameters: the ratio of the linear ion density to fluorescence lifetime, and the absorption of gain spectra. Analytical techniques then allow accurate evaluation of gain, saturation, and noise in low-gain amplifiers (G >

Modeling erbium-doped fiber amplifiers

Tellurite glass: a new candidate for fiber devices

Material-dependent properties influencing the performance of fiber amplifiers are reviewed together with the available data for Er/sup 3+/. The major glass types potentially useful in this application are considered and compared to silica. The topics addressed include quenching processes and the solubility of rare-earth ions, transition strengths and bandwidths at the 1500-nm gain transition, and the characteristics at the 800-, 980-, and 1480-nm pump bands. Aluminum is shown to be an extremely useful codopant for silica, improving its ability to dissolve rare-earth ions and providing desirable spectroscopic properties for Er/sup 3+/. For some of the attributes considered, other glasses have advantages over Al silica, but only with respect to gain bandwidth and pumping performance at 800 nm is significantly better than expected from other glass compositions. >

Erbium-doped glasses for fiber amplifiers at 1500 nm

A marriage of optical fibre fabrication technology and LSI microfabrication technology gave birth to fibre-matched silica waveguides on silicon: thick glass layers of high-silica-content glass are deposited on silicon by flame hydrolysis, a method originally developed for fibre preform fabrication. Silica channel waveguides are then formed by photolithographic pattern definition processes followed by reactive ion etching. This ‘high silica (HiS) technology’ offers the possibility of integrating a number of passive functions on a single silicon chip, as well as the possibility of the hybrid integration of both active and passive devices on silicon. This paper reviews the NTT HiS technology and its application to integrated-optic components such as optical beam splitters, optical switches, wavelength-division multi/demultiplexers and optical frequency-division multi/demultiplexers. The clear and simple waveguide structures produced by the HiS technology make it possible to design and fabricate these components with high precision and excellent reproducibility.

Silica waveguides on silicon and their application to integrated-optic components

TUTORIAL REVIEW Silica waveguides on silicon and their application to integrated-optic components

We describe the first wide-band tellurite-based fiber Raman amplifier (T-FRA) for application to seamless ultra-large-capacity dense wavelength-division multiplexing (WDM) systems. First, we confirmed that the Raman scattering characteristics of the tellurite-based fiber has so large a gain coefficient and Stokes shift that we can achieve a wide-band tellurite-based fiber Raman amplifier with a shorter fiber length than when using silica-based fiber. Second, we investigated the small signal gain and the signal transmission characteristics for a high gain and high output power operation with a single-stage amplifier. Focusing on double Rayleigh scattering, we compared the high gain limit of tellurite- and silica-based fibers. We then studied the impact of nonlinear effects by measuring the bit error rate (BER) when using a two-stage amplifier with a high output power of 18.8 dBm in which we simultaneously amplified eight channel signals in the L-band located on the ITU 100-GHz grid. Finally, we designed a wide-band tellurite-based fiber Raman amplifier with a multiwavelength band pumping scheme. We constructed this amplifier with a tellurite-based fiber only 250 m in length pumped by four-wavelength-channel laser diodes, and it provided a 160-nm bandwidth with a gain of over 10 dB and a noise figure below 10 dB from 1490 to 1650 nm. We also measured the BER to confirm the transmission characteristics of the amplifier for single channel operation over the whole signal wavelength range of 160 nm. We thus confirmed that the amplifier could be employed in ultra-high-capacity WDM systems.

Ultra-wide-band tellurite-based fiber Raman amplifier

The Er-doped silica guided-wave laser operating around 1.6 μm was realised using a low-scattering-loss planar lightwave circuit with an Er-doped silica core which was fabricated by flame hydrolysis deposition and reactive ion etching techniques on an Si substrate. CW lasing was achieved successfully with an incident threshold power of 49 mW for pumping at 0.98 μm.

Guided-wave laser based on erbium-doped silica planar lightwave circuit

We successfully developed a fluoride-based Er/sup 3+/-doped fiber amplifier (F-EDFA). An average signal gain of 26 dB was achieved for 8 channel wavelength division multiplexed (WDM) signals in the 1532-1560 nm wavelength region with a gain excursion of less than 1.5 dB at an input signal power of -20 dBm per channel. Furthermore, we studied the amplification characteristics of the F-EDFA for WDM signals. The following experimental results were obtained. (1) For an 8-channel WDM signal in the 1532 to 1560 nm wavelength region, the gain excursion between channels can be suppressed to within 1.5 dB. However, the wavelength region allowing a gain excursion of 1.5 dB, is between 1536-1560 nm for the silica-based Er/sup 3+/-doped fiber amplifier. (2) F-EDFAs have a flat gain region between 1534-1542 nm. The gain excursion of this region is less than 0.2 dB for WDM signals.

Fluoride-based erbium-doped fiber amplifier with inherently flat gain spectrum

This paper describes the development of a 1.58-/spl mu/m broad-band and gain-flattened erbium-doped tellurite fiber amplifier (EDTFA). First, we compare the spectroscopic properties of various glasses including the stimulated emission cross sections of the Er/sup 3+4/ I/sub 13/2/ /sup 4/I/sub 15/2/ transition and the signal excited-state absorption (ESA) cross sections of the Er/sup 3+4/ I/sub 13/2/ - /sup 4/I/sub 9/2/ transition. We detail the amplification characteristics of a 1.58-/spl mu/m-band EDTFA designed for wavelength-division-multiplexing applications by comparing it with a 1.58-/spl mu/m-band erbium-doped silica fiber amplifier. Furthermore, we describe the 1.58-/spl mu/m-band gain-flattened EDTFA we developed using a fiber-Bragg-grating-type gain equalizer. We achieved a gain of 25.3 dB and a noise figure of less than 6 dB with a slight gain excursion of 0.6 dB over a wide wavelength range of 1561-1611 nm. The total output power of the EDTFA module was 20.4 dBm and its power conversion efficiency reached 32.8%.

1.58-/spl mu/m broad-band erbium-doped tellurite fiber amplifier

We report an S-band erbium-doped fiber amplifier (EDFA) with a multistage configuration in terms of its design, gain, and noise characteristics for various pump powers and input signal powers, the temperature dependence of the gain spectra, and gain tilt compensation for changes in input signal power and temperature change. We show that there is a tradeoff between low noise and efficiency in the S-band EDFA and describe the development of an S-band EDFA with a flattened gain of more than 21 dB and a noise figure of less than 6.7 dB. We also show that there is a change in the gain spectra with changes in the pump power and input signal power that is different from that observed in C- and L-band EDFAs, and that our EDFA has a temperature-insensitive wavelength. Furthermore, we develop a gain tilt compensated S-band EDFA that can cope with changes in input signal power and temperature.

Shimizu Makoto

Papers

Ultra-wide-band tellurite-based fiber Raman amplifier

Guided-wave laser based on erbium-doped silica planar lightwave circuit

Fluoride-based erbium-doped fiber amplifier with inherently flat gain spectrum

1.58-/spl mu/m broad-band erbium-doped tellurite fiber amplifier

S-band erbium-doped fiber amplifiers with a multistage configuration /sub e/sign, characterization, and gain tilt compensation