Methods for preparing organic thin films on substrates, the method comprising the steps of providing a plurality of organic precursors in the vapor phase, and reacting the plurality or organic precursors at a sub-atmospheric pressure. Also included are thin films made by such a method and apparatuses used to conduct such a method. The method is well-suited to the formation of organic light emitting devices and other display-related technologies.

Low pressure vapor phase deposition of organic thin films

A common photodetecting unit detects a plurality of beams scanned by a plurality of polyhedral reflection mirrors provided in a multiple stages with a common rotation axis, and generates a synchronization detection signal based on detected beams. The reflection mirrors make a predetermined angle θ1 in a direction of rotation of the reflection mirrors. When time between two consecutive synchronization detection signals on a time line generated by the common photodetecting unit is ti, where i is a positive integer equal to or smaller than number of split beams, at least one of ti is different from others.

Optical scanning device and image forming apparatus

A method and apparatus for the manipulation of colloidal particulates and biomolecules at the interface between an insulating electrode such as silicon oxide and an electrolyte solution. Light-controlled electrokinetic assembly of particles near surfaces relies on the combination of three functional elements: the AC electric field-induced assembly of planar aggregates; the patterning of the electrolyte/silicon oxide/silicon interface to exert spatial control over the assembly process; and the real-time control of the assembly process via external illumination. The present invention provides a set of fundamental operations enabling interactive control over the creation and placement of planar arrays of several types of particles and biomolecules and the manipulation of array shape and size. The present invention enables sample preparation and handling for diagnostic assays and biochemical analysis in an array format, and the functional integration of these operations. In addition, the present invention provides a procedure for the creation of material surfaces with desired properties and for the fabrication of surface-mounted optical components.

Light-controlled electrokinetic assembly of particles near surfaces

A method and an apparatus for an optical inspection of an object (12), having upper (12A) and lower (12B) faces, so as to detect defects existing on the object. First and second beams (118A, 130A) of an incident radiation are produced and directed onto the object. A light component (140) of the first incident beam, which is reflected from one face of the object, and a light component (142) of the second incident beam, which is transmitted through the upper and lower faces of the object, are simultaneously sensed. First and second images, formed, respectively by reflected and transmitted light components are acquired and analyzed so as to provide data indicative of the defects.

Optical inspection method and apparatus

An apparatus and method for treating a thin film on a substrate is presented. The substrate is loaded on a fixed stage adapted to receive the substrate. An energy source is aligned through a space in a gas shield so as to face a thin film on the substrate to be repaired after the substrate is loaded. A protective insulating layer is removed by radiation from the energy source, a reaction gas is supplied to the space, and an open and/or short circuit in the thin film is repaired. The energy source and/or gas shield is moved during the repair, rather than the stage. If the energy source and gas shield are both moved, they are moved in opposite directions, either independently or dependent on each other, by first and second operating units, respectively.

Apparatus for treating thin film and method of treating thin film

Method and apparatus for film formation by chemical vapor deposition

A device and method for inspecting a test piece with a laser beam in which the laser beam is divided into plural beams, and each of the plural beams has an identification marker, such as a particular polarity or intensity. Each of the marked beams, scans a different portion of the test piece to reduce the time needed to inspect the test piece.

Method and apparatus for inspecting high-precision patterns

The usage of ArF immersion lithography for hp 65nm node and beyond leads to the increase of mask error enhancement factor in the exposure process. Wavelength of inspection tool is required to consistent with wavelength of lithography tool. Wavelength consistency becomes more important by the introduction of phase shift mask such as Tri-tone mask and alternating phase shift mask. Therefore, mask inspection system, whose inspection light wavelength is 199nm, has been developed. This system has transmission and reflection inspection mode, and throughput, using 70 nm pixel size, were designed within 2hours per mask. The experimental results show expected advantages for Die-to-Die and Die-to-Database inspection compared with the system using 257nm inspection optics. Shorter wavelength effect makes transmission inspection sensitivity increase, and realizes 40nm size particle inspection. As for the phase shift mask, the difference of gray value between the area with phase defect and without phase defect was clear relatively. In this paper, specifications and design, experimental results are described.

Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond

In a photo-CVD apparatus, a holder on which an article is held is provided in a main chamber. The holder is moved in a predetermined direction to coincide a predetermined point of the article with a imaging point of light radiated from a light source, so that a thin film is grown on the predetermined point of the article. A process chamber is defined on the holder of the main chamber is accordance with the separation of a seal wall. Process gas is supplied to the process chamber for the growing of the thin film on the article, while inert gas is supplied to the remaining portion of the main chamber. A gas pressure of the main chamber is slightly greater than that of the process chamber, so that the process gas is prevented from flowing to the main chamber. For this structure, a size of the process chamber can be small, so that a consumption of process gas is decreased.

Photo-chemical vapor deposition apparatus

In this paper, we will report two evaluation results. One is the relationship between EUVL mask structure and image
contrast values captured by 199nm inspection optics. The other is the influence of mask structure on defect inspection
sensitivity.
We utilized a commercially available DUV inspection system that has the shortest inspection wavelength at 199nm.
Using the 199nm inspection optics, enough image contrast values on hp32nm 1:1 lines and spaces using ArF-half tone
(HT) mask were obtained. On the other hand, image contrast values were not sufficient for conventional EUVL mask
that have a 70nm absorber layer thickness. To improve the contrast values of mask pattern image, we evaluated the
effect of absorber layer thickness on inspection image contrasts. As a result, reducing the thickness of the absorber layer
to 44nm, enough image contrast values of hp32nm 1:1 lines and spaces patterns were obtained.
In this paper, the influence of the thickness of absorber layer on inspection sensitivities for opaque and clear extension
defects are also discussed.

Shingo Murakami

Papers

Method and apparatus for film formation by chemical vapor deposition

Method and apparatus for inspecting high-precision patterns

Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond

Photo-chemical vapor deposition apparatus

Evaluation of EUVL-mask pattern defect inspection using 199-nm inspection optics