Several microwatts of tunable cw radiation near 194 nm in a linewidth of less than 2 MHz have been generated by sum-frequency mixing the radiation from a frequency-doubled argon-ion laser with the radiation from a ring dye laser in a crystal of potassium pentaborate. An external ring cavity resonant with the dye laser gives an enhancement factor of about 14 in the sum-frequency-generated radiation power. The Doppler-limited absorption spectrum of the 6s(2)S((1/2))-6p(2)P((1/2)) first resonance line of natural Hg II has been resolved, and the vacuum wave number for the mass-202 isotope has been measured to be 51485.904(20) cm(-1).

Generation of continuous-wave 194-nm radiation by sum frequency mixing in an external ring cavity (A)

A method for identifying lithographically significant defects. A photomask is illuminated to produce images that experience different parameters of the reticle as imaged by an inspection tool. Example parameters include a transmission intensity image and a reflection intensity image. The images are processed together to recover a band limited mask pattern associated with the photomask. A model of an exposure lithography system for chip fabrication is adapted to accommodate the band limited mask pattern as an input which is input into the model to obtain an aerial image of the mask pattern that is processed with a photoresist model yielding a resist-modeled image. The resist-modeled image is used to determine if the photomask has lithographically significant defects.

Method for detecting lithographically significant defects on reticles

A position detection apparatus includes an imaging system, an illumination system including a rotary table having first and second aperture stops, both of which can be positioned on the pupil plane of the illumination system, a first image sensor that detects the image of the mark formed by the imaging system, a second image sensor that senses an image of the aperture stop for the imaging system and that of the first aperture stop, and a controller. The controller corrects the first aperture stop so as to reduce the adverse influence of a displacement of the first aperture stop, based on sensed images of the aperture stop for the imaging system and the first aperture stop. Based on the detected position of the image of the mark, the apparatus detects the position of an object to be detected using the illumination light having passed through the corrected first aperture stop.

Position detection apparatus, exposure apparatus, and method of manufacturing device

Over 2 mW of continuous-wave tunable 194-nm light is produced by sum-frequency mixing approximately 500 mW of 792-nm and 500 mW of 257-nm radiation in beta-barium borate (BBO). The powers in both fundamental beams are enhanced in separate ring cavities whose optical paths overlap in the Brewster-cut BBO crystal. Due to the higher circulating fundamental powers, the sum-frequency-generated power is nearly 2 orders of magnitude greater than previously reported values.

Sum-frequency generation of continuous-wave light at 194 nm

A computer-implemented method including receiving streaming media, wherein the streaming media is requested by a media player at a mobile device; retrieving timing information from the streaming media, wherein the timing information corresponds to real-time playback rate on the media player; framing the streaming media based on the real-time playback rate on the media player; scheduling transmission of the framed streaming media based on the framing; and transmitting the framed streaming media to the media player according to the schedule.

Method for controlling download rate of real-time streaming as needed by media player

A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.

Inspection apparatus having two sensors, method for inspecting an object, and a method for manufacturing a photolithography mask

The usage of ArF immersion lithography for hp 65nm node and beyond leads to the increase of mask error enhancement factor in the exposure process. Wavelength of inspection tool is required to consistent with wavelength of lithography tool. Wavelength consistency becomes more important by the introduction of phase shift mask such as Tri-tone mask and alternating phase shift mask. Therefore, mask inspection system, whose inspection light wavelength is 199nm, has been developed. This system has transmission and reflection inspection mode, and throughput, using 70 nm pixel size, were designed within 2hours per mask. The experimental results show expected advantages for Die-to-Die and Die-to-Database inspection compared with the system using 257nm inspection optics. Shorter wavelength effect makes transmission inspection sensitivity increase, and realizes 40nm size particle inspection. As for the phase shift mask, the difference of gray value between the area with phase defect and without phase defect was clear relatively. In this paper, specifications and design, experimental results are described.

Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond

A continuous-wave 198.5-nm light is produced by sum-frequency generation in CLBO for advanced photolithography mask inspections. Two fundamental lights are frequency-stabilized and mixed in an external cavity. The output power of 50mW was demonstrated with a single-resonance cavity.

CW 198.5-nm light generation in CLBO

A wavelength conversion light source apparatus includes a fundamental wave light source configured to emit a fundamental wave, a nonlinear crystal configured to convert a wavelength of the fundamental wave by being irradiated with the fundamental wave and making the fundamental wave pass therethrough, and a movement unit configured to place the nonlinear crystal thereon and continuously move the nonlinear crystal within a plane, where a phase matching condition is not violated, so that a passage path of the fundamental wave passing through the nonlinear crystal is changed.

Wavelength conversion light source apparatus and wavelength conversion method

PROBLEM TO BE SOLVED: To compensate output fluctuations of a sensor by measuring and correcting a beam shape. SOLUTION: An image reading apparatus is provided with beam shape monitors 28, 29 for measuring the optical axis tilt and a beam diameter of a laser light, generated from a laser generator 1, a correction mirror 22 for correcting the optical axis tilt and the beam diameter to a predetermined value, based on measurements measured by the beam shape monitors 28, 29, a correction lens 23, an optical system K for guiding the laser light corrected by the correction mirror 22 and the correction lens 23 to a subject pattern 34, making the laser light irradiated and guiding the laser light reflected from or passing through the subject pattern 34 in the predetermined direction and the sensor 37 for inputting the laser light guided by the optical system K and reading the image of the subject pattern 34. COPYRIGHT: (C)2004,JPO

Shinichi Imai

Papers

Inspection apparatus having two sensors, method for inspecting an object, and a method for manufacturing a photolithography mask

Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond

CW 198.5-nm light generation in CLBO

Wavelength conversion light source apparatus and wavelength conversion method

Laser generator, image reading apparatus and image inspection apparatus