Shinjiro Hara

TL;DR: In this paper, a periodically aligned dense core-shell pn junction InP nanowire array was fabricated and used in photovoltaic device applications, which exhibited open-circuit voltage (VOC), shortcircuit current (ISC) and fill factor (FF) levels of 0.43 V, 13.72 mA/cm2 and 0.57, respectively, which indicated a solar power conversion efficiency of 3.37% under AM1.5G illumination.

TL;DR: In this paper, GaAs∕AlGaAs core-shell nanowires were fabricated by using selective area metalorganic vapor phase epitaxy (SVAE) by selectively growing on partially masked GaAs (111)B substrates.

TL;DR: In this article, position-controlled and orientation-controlled growth of InAs, GaAs, and InGaAs NWs on Si by selective-area growth is discussed. And the integration of a III-V NW-based vertical surrounding-gate field-effect transistor and light-emitting diodes array on Si is demonstrated.

TL;DR: In this paper, size, shape, and position-controlled growth of high-density InAs nanowire array on InAs (1 11)B substrates by selective-area metalorganic vapor phase epitaxy (SA-MOVPE) was reported.

TL;DR: The catalyst-free growth of InP nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) is studied and it is shown that they undergo transition of crystal structures depending on the growth conditions.