S
Shinsuke Harada
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 183
Citations - 2171
Shinsuke Harada is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 22, co-authored 169 publications receiving 1709 citations.
Papers
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Journal ArticleDOI
Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face
J. Senzaki,Kazu Kojima,Shinsuke Harada,Ryoji Kosugi,Seiji Suzuki,T. Suzuki,Kenji Tsukuba Fukuda +6 more
TL;DR: In this article, the effects of hydrogen postoxidation annealing (H/sub 2/POA) on 4H-silicon carbide (SiC) MOSFETs with wet gate oxide on the (112~0) face have been investigated.
Journal ArticleDOI
Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation
TL;DR: In this paper, the authors proposed another process for fabricating 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) with high channel mobility.
Journal ArticleDOI
Development of Ultrahigh-Voltage SiC Devices
Kenji Fukuda,Dai Okamoto,Mitsuo Okamoto,Tadayoshi Deguchi,Tomonori Mizushima,Kensuke Takenaka,Hiroyuki Fujisawa,Shinsuke Harada,Yasunori Tanaka,Yoshiyuki Yonezawa,Tomohisa Kato,Shuji Katakami,Manabu Arai,Manabu Takei,Shinichiro Matsunaga,Kazuto Takao,Takashi Shinohe,Toru Izumi,Toshihiko Hayashi,Syuuji Ogata,Katsunori Asano,Hajime Okumura,Tsunenobu Kimoto +22 more
TL;DR: In this article, a power module fabricated using a nanotech resin, Si3N4 ceramic substrate, and W base plate was shown to be suitable for ultra-high voltage and high temperature.
Journal ArticleDOI
Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor
TL;DR: In this article, a linear relation was observed between the threshold voltage shift when the temperature varies from −150 to 150°C and the number of the interface states present within the energy range of 0.2 −0.4 eV from the conduction band edge energy.
Journal Article
Characterization of Traps at Nitrided SiO 2 / SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements
Tetsuo Hatakeyama,Yuji Kiuchi,Mitsuru Sometani,Dai Okamoto,Shinsuke Harada,Hiroshi Yano,Yoshiyuki Yonezawa,Hajime Okumura +7 more
TL;DR: In this paper, the effects of nitridation on the density of traps at SiO2/SiC interfaces near the conduction band edge were qualitatively examined using a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements.