S
Shinsuke Harada
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 183
Citations - 2171
Shinsuke Harada is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 22, co-authored 169 publications receiving 1709 citations.
Papers
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Journal ArticleDOI
First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS
Masataka Okawa,Ruito Aiba,Taiga Kanamori,Yusuke Kobayashi,Shinsuke Harada,Hiroshi Yano,Noriyuki Iwamuro +6 more
TL;DR: In this paper, the authors report a unique short circuit failure mechanism of a 1.2 kV SBD-wall-integrated trench MOSFET (SWITCH-MOS), using numerical simulations and experimental validation.
Proceedings ArticleDOI
High-temperature Performance of 1.2 kV-class SiC Super Junction MOSFET
Yusuke Kobayashi,Shinya Kyogoku,Tadao Morimoto,Teruaki Kumazawa,Yusuke Yamashiro,Manabu Takei,Shinsuke Harada +6 more
TL;DR: In this paper, the static and dynamic characteristics of the SiC SJ MOSFET at high temperature have been first demonstrated to clarify the mechanism of the soft recovery of the body-diode.
Proceedings ArticleDOI
First Demonstration of a Monolithic SiC Power IC Integrating a Vertical MOSFET with a CMOS Gate Buffer
TL;DR: In this paper, a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field effect transistor (MOSFET) and a complementary CMOS gate buffer aiming to enhance the fast switching by eliminating the parasitic effects caused by external interconnections.
Journal ArticleDOI
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
Yoshiyuki Yonezawa,Tomonori Mizushima,Kensuke Takenaka,Hiroyuki Fujisawa,Tadayoshi Deguchi,Tomohisa Kato,Shinsuke Harada,Yasunori Tanaka,Dai Okamoto,Mitsuru Sometani,Mitsuo Okamoto,M. Yoshikawa,Takashi Tsutsumi,Yoshiyuki Sakai,Naoki Kumagai,Shinichiro Matsunaga,Manabu Takei,Masayuki Arai,Tetsuo Hatakeyama,Kazuto Takao,Takashi Shinohe,Toru Izumi,Tsukasa Hayashi,Koji Nakayama,K. Asano,Masaaki Miyajima,Hitoshi Kimura,Akihiro Otsuki,Kenji Fukuda,Hajime Okumura,Tsunenobu Kimoto +30 more
TL;DR: In this paper, a flip-type n-channel implantation and epitaxial (IE)-IGBTs were developed, and the static and dynamic performance of IE-IGBT was investigated.
Journal ArticleDOI
Characterization of near-interface traps at 4H-SiC metal–oxide–semiconductor interfaces using modified distributed circuit model
Xufang Zhang,Dai Okamoto,Tetsuo Hatakeyama,Mitsuru Sometani,Shinsuke Harada,Ryoji Kosugi,Noriyuki Iwamuro,Hiroshi Yano +7 more
TL;DR: In this paper, the authors characterized the near interface traps (NITs) in SiO2/4H-SiC structures according to the distributed circuit model, which was originally proposed for Al2O3/InGaAs interface structures.