High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their SiO/sub 2/ counterparts. In this paper we review the status of reliability studies of high-k gate dielectrics and try to illustrate it with experimental results. High-k materials show novel reliability phenomena related to the asymmetric gate band structure and the presence of fast and reversible charge. Reliability of high-k structures is influenced both by the interfacial layer as well as the high-k layer. One of the main issues is to understand these new mechanisms in order to asses the lifetime accurately and reduce them.

Review on high-k dielectrics reliability issues

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.

Nonvolatile memory device and method for fabricating the same

Provided is a non-volatile semiconductor storage device including: a memory cell array where memory cells are arranged in a matrix shape; and a control unit which erases the memory cell by applying an erasing voltage to a well side of the memory cell and preliminarily erases the memory cell by applying a preliminary erasing voltage to the well side of the memory cell before the erasing while applying a voltage, which is higher than the voltage during the erasing, to a control gate electrode of the memory cell.

Non-volatile semiconductor storage device

A system architecture for thwarting denial of service attacks on a victim data center is described. The system includes a first plurality of data monitors that monitor network traffic flow through the network. The first plurality of monitors is disposed at a second plurality of points in the network. The system includes a central controller that receives data from the plurality of monitors, over a hardened, redundant network. The central controller analyzes network traffic statistics to identify malicious network traffic. In one embodiment, a gateway device is disposed to pass network packets between the network and the victim site. The gateway includes a computing device executing a process to build a histogram for any attribute or function of an attribute of network packets and a process to determine if the values of the attribute exceed normal, threshold values expected for the attribute to indicate an attack on the site.

Denial of service attacks characterization

A method of forming a vertical transistor memory device includes the following steps. Before forming the trenches, FOX regions are formed between the rows. Form a set of trenches with sidewalls and a bottom in a semiconductor substrate with threshold implant regions the sidewalls. Form doped drain regions near the surface of the substrate and doped source regions in the base of the device below the trenches with oppositely doped channel regions therebetween. Form a tunnel oxide layer over the substrate including the trenches. Form a blanket thick floating gate layer of doped polysilicon over the tunnel oxide layer filling the trenches and extending above the trenches. Etch the floating gate layer down below the top of the trenches. Form an interelectrode dielectric layer composed of ONO over the floating gate layer and over the tunnel oxide layer. Form a blanket thick control gate layer of doped polysilicon over the interelectrode dielectric layer. Pattern the control gate layer into control gate electrodes. Form spacers adjacent to the sidewalls of the control gate electrode.

Method of manufacture of vertical split gate flash memory device

A new method is provided for the creation of a Shallow Trench Isolation region. A layer of pad oxide is deposited on the surface of a substrate; a layer of nitride is deposited over the layer of pad oxide. The layers of pad oxide and nitride are patterned and etched over the region where the STI is to be formed, a trench is etched in the silicon for the STI region. A layer of TEOS, that serves as a buffer spacer oxide, is deposited over the surface of the layer of nitride thereby including the inside of the created trench. The layer of TEOS is etched removing the TEOS from the surface of the nitride and from the bottom of the trench but leaving a layer of TEOS in place along the sidewalls of the trench. The bottom of the trench is next etched after which the TEOS spacer buffer is removed from the sidewalls of the trench. The sidewalls of the trench now have a non-linear profile. A layer of TEOS is deposited and polished leaving the trench filled with TEOS and at the same time removing the nitride from the surface of the pad oxide. N-well and P-well implants are performed after which N+ and P+ implants are performed around the periphery of the STI trench.

STI process for improving isolation for deep sub-micron application

An MOS integrated circuit, such as an input-output buffer, exhibits improved resistance to damage from electrostatic discharge (ESD) by balancing the ESD current flow through active and inactive sections of drivers. Better balance of the ESD current flow is achieved by increasing the width and length of nulti-finger channels of semiconductor material defining the gates of the drivers in the active section. Wider, longer gates of the drivers in the active section increase their ability to carry current, thereby resulting in a more symmetrical distribution of ESD current between the active and inactive sections without degrading the IC's normal performance.

Integrated circuit having improved ESD protection

A stacked-gate flash memory cell is provided having step-shaped poly-gates with increased overlap area between them in order to increase the coupling ratio and hence the program speed of the cell. The floating gate is first formed with a step and the intergate dielectric is conformally shaped thereon followed by the forming of the control gate thereon. The increase in the overlap area can be achieved by forming gates with multiply connected surfaces of different shapes.

Step-shaped floating poly-si gate to improve gate coupling ratio for flash memory application

A method of forming a vertical transistor memory device comprises the following process steps. Before forming the trenches, FOX regions are formed between the rows. Then form a set of trenches with sidewalls and a bottom in a semiconductor substrate with threshold implant regions the sidewalls. Form doped drain regions near the surface of the substrate and doped source regions in the base of the device below the trenches with oppositely doped channel regions therebetween. Form a tunnel oxide layer over the substrate including the trenches. Form a blanket thin floating gate layer of doped polysilicon over the tunnel oxide layer extending above the trenches. Etch the floating gate layer leaving upright floating gate strips of the floating gate layer along the sidewalls of the trenches. Form an interelectrode dielectric layer composed of ONO over the floating gate layer and over the tunnel oxide layer. Form a blanket thin control gate layer of doped polysilicon over the interelectrode dielectric layer. Pattern the control gate layer into control gate electrodes. Form spacers adjacent to the sidewalls of the control gate electrode.

Shui-Hung Chen

Papers

Method of manufacture of vertical split gate flash memory device

STI process for improving isolation for deep sub-micron application

Integrated circuit having improved ESD protection

Step-shaped floating poly-si gate to improve gate coupling ratio for flash memory application

Vertical stacked gate flash memory device