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Shuming Han

Researcher at Jiangxi Normal University

Publications -  8
Citations -  87

Shuming Han is an academic researcher from Jiangxi Normal University. The author has contributed to research in topics: Chemical vapor deposition & Chemistry. The author has an hindex of 4, co-authored 5 publications receiving 73 citations.

Papers
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Influences of carrier gas flow rate on the morphologies of MoS2 flakes

TL;DR: In this paper, the authors showed that the carrier gas flow rate has strong influence on the structure and morphology of CVD-grown MoS 2 flakes, and consequently tailors the optical properties significantly.
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Horizontal growth of MoS2 nanowires by chemical vapour deposition

TL;DR: In this article, a single step route for the synthesis of MoS2 wires using a chemical vapour deposition (CVD) method was described, and the horizontally oriented MoS 2 nanowires on SiO2/Si substrate can be synthesized successfully.
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Morphology evolution of MoS2 nanorods grown by chemical vapor deposition

TL;DR: In this article, the authors observed the regular morphology evolution of chemical vapor deposition (CVD) grown MoS 2 nanorods along the gas flow direction on the SiO 2 /Si substrate.
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Morphology engineering of monolayer MoS2 by adjusting chemical environment during growth

TL;DR: In this paper, the shape evolution of the chemical vapor deposition (CVD) grown MoS2 flakes was studied and it was shown that the morphology of monolayer flakes transformed from truncated triangular shape to triangular shape by increasing the stoichiometric ratio of S:Mo.
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Morphology evolution of MoS2: From monodisperse nanoparticles to self-assembled nanobelts

TL;DR: In this paper, a three-step morphology evolution process, which includes initial nucleation process, self-assembly process, and subsequent crystal growth process (Ostwald ripening), is proposed to explain the formation of MoS 2.