Showing papers in "Journal of Crystal Growth in 2015"
TL;DR: In this article, the growth of high-quality AlN film using metal-organic vapor phase epitaxy was reported, where three layers of middle-temperature (MT) AlN were introduced during the hightemperature AlN growth, aluminum and nitrogen sources were closed for 6 seconds after every 5nm MT-AlN, while H2 carrier gas was always on.
90 citations
TL;DR: In this article, the authors demonstrate the high-speed growth of β-Ga2O3 quasi-heteroepilayers on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy (HVPE).
85 citations
TL;DR: In this paper, the synthesis of asymmetric dithiocarbamates of tin (II) with the formula [Sn(S 2 CNRR ) 2 ] was described and their use for the deposition of SnS thin films by aerosol-assisted chemical vapour deposition (AACVD) was investigated.
71 citations
TL;DR: In this paper, a plasma enhanced atomic layer deposition (PEALD) process was used to deposit crystalline AlN thin films at 250 1C using nitrogen 5% hydrogen plasma and trimethylaluminum precursors.
68 citations
TL;DR: In this paper, the formation of a graphene-like AlN (g-AlN) layer on a (111)-oriented silicon substrate in ammonia molecular beam epitaxy (MBE) has been investigated by the RHEED method.
68 citations
TL;DR: In this paper, the impact of melt convection on the dendritic growth was investigated by means of X-ray radioscopy and the experimental results showed a facilitation of the growth of primary trunks or lateral branches, suppression of side branching, dendrite remelting and fragmentation.
67 citations
TL;DR: In this paper, the results on the successful growth of CH 3 NH 3 PbX 3 (X=I, Br) single crystals sized up to centimeters using hydrohalic acid solution method were presented.
61 citations
TL;DR: In this article, the authors studied the dynamics of sodium chloride crystallization induced by evaporation of aqueous solution in a circular capillary tube and showed that the precipitation kinetics is fast compared to transport so that the crystal growth is mostly controlled by the transport.
57 citations
TL;DR: In this paper, the structural evolution of ZIF-67 as a function of time at room temperature was reported and various stages of Zif-67 formation (nucleation, crystallization, growth, and steady state periods) were identified.
52 citations
TL;DR: In this paper, the authors performed optical transmission measurements on high quality bulk gallium nitride (GaN) crystals grown by sodium flux, hydride vapor phase epitaxy, and the ammonothermal method with varying free electron concentrations ranging from 4×10 16 ǫ −3 to 9×10 18ǫ -3.
46 citations
TL;DR: In this article, the authors investigated the fundamental mechanisms behind the increased radiative efficiency at wavelengths of 530-590 nm with AlGaN interlayers (ILs) in InGaN/AlGaN and GaN/GaN-based multiple quantum wells.
TL;DR: In this paper, the shandite-type half metallic ferromagnet Co3Sn2S2 and its In-substituted compounds, Co3sn2−xInxS2 (0
TL;DR: In this paper, structural, electrical, and optical properties of Si-doped γ-Ga 2 O 3 films epitaxially grown on (100) MgAl 2 O 4 substrate by pulsed-laser deposition were reported.
TL;DR: The numerical study of grid sensitivity indicates that the global segregation pattern and CET are not significantly affected by grid size; however, some fine details of the segregation map which are predicted by fine grid are smeared or locally averaged by the coarse grid.
TL;DR: The results of real-time X-ray radiography of grain refined and unrefined Al-Si alloys solidified at the SPring-8 synchrotron were reported in this paper.
TL;DR: In this article, the authors investigated the relationship between threading dislocation density and the crystal habit during the growth and concluded that the natural reduction of threading dislocations was caused by coalescence of bunched steps, which easily occurs in during the Na-flux growth on small-sized “point seeds.
TL;DR: In this paper, the attachment energy model was employed to predict 1,3,5,7-tetranitro-1, 3, 5, 7, 7tetraazacy-clooct ane (HMX) crystal morphology in acetonitrile solution.
TL;DR: In this article, the change in surface step structure by 4 at% Al addition to the solvent was investigated for the solution growth of 4H-SiC with Si 1−x Cr x solvents.
TL;DR: In this paper, temperature dependence of crystalline quality of AlN layers at 1050-1250°C with a fine increment step of around 18°C was studied, showing that high quality AlN/sapphire templates can be achieved at temperatures as low as 1086°C which is accessible by most of the III-nitride MOCVD systems.
TL;DR: In this paper, a single crystal of Piperazinium adipate was grown from aqueous solution at room temperature by slow solvent evaporation method, which belongs to triclinic crystal system with centrosymmetric space group P 1 ¯.
TL;DR: A transient global model was established to investigate the effect of the raise velocities of the partition block on the crystal growth rate, the crystal-melt (C-M) interface and the thermal stress distribution during the solidification process as discussed by the authors.
TL;DR: In this paper, the GaN micro truncated-pyramid (μ-TP) was grown on the patterned AlN/Si template in metal organic chemical vapor deposition (MOCVD) system.
TL;DR: In this paper, experimental results on the instability of thermocapillary convection in long half-zone liquid bridges of high Prandtl number fluids (Pr=67, 112 and 207 for 5, 10 and 20 cSt silicone oils, respectively).
TL;DR: In this article, the impacts of oxygen-radical (O ⁎ ) atmosphere for pulsed-laser deposition (PLD) of β -Ga 2 O 3 and β -(Al x Ga 1− x ) 2 O3 films on (010) β-Ga 2O 3 substrate in comparison with conventional PLD in O 2 atmosphere were reported.
TL;DR: In this paper, the growth of high-quality ErMnO 3 single crystals with dimensions of 5mm in diameter and up to 60mm in length using the pressurized floating-zone technique is reported.
TL;DR: In this paper, a new class of frustrated magnets, the lanthanide zirconates, have been characterized and tested for their quality using X-ray diffraction techniques.
TL;DR: In this article, the surface morphology, microstructural and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied.
TL;DR: In this paper, a five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE, which enables the development of BAlGaN based multi-layered heterostructures for UV and deep UV applications.
TL;DR: In this paper, self-assembled InAs quantum dots (QDs) were grown by solid source molecular beam epitaxy and the impact of growth parameters like the growth temperature of the InGaAlAs nucleation layer, V/III ratio and growth rate during growth of QD layers were carefully investigated by using atomic force microscopy and photoluminescence spectroscopy.
TL;DR: In this article, the effect of the pulling rate (0.1-1 mm min−1) on the crystallography and the microstructure of a ternary eutectic system has been investigated.