Shutao Wen

TL;DR: Based on the concentration distributions of aluminum and calcium along the growth direction, the removal mechanism of such impurities with both high saturated vapor pressures and low segregation coefficients is investigated in this paper, where the results show that the removal of this type of impurities only depends on evaporation during vacuum induction melting process, thus their contents decrease significantly due to the strongly eva-oration under the high temperature and high vacuum conditions.

TL;DR: A multicrystalline silicon ingot was obtained from metallurgical-grade silicon after directional solidification under low vacuum condition, and the concentration distributions of metal impurities such as copper (Cu), manganese (Mn), and sodium (Na) along the growth direction of the ingot were investigated.

TL;DR: In this paper, the electromagnetic separation of silicon carbide inclusions in multicrystalline silicon by imposition of supersonic-frequency magnetic field was investigated, and the separation efficiency reached up to 89.3% at a holding time of 45 min.

TL;DR: In this article, a theoretical model was proposed to determine the thermal contact resistance (TCR) on the surfaces of silicon and copper during electron beam melting, and the effect of temperature and pressure on TCR based on specific melting process conditions was discussed.

TL;DR: In this paper, a mathematical model is developed to investigate the removal of volatile impurities in molten silicon by electron beam melting (EBM) with a high efficiency and low energy consumption.