Tan Yi

TL;DR: Based on the concentration distributions of aluminum and calcium along the growth direction, the removal mechanism of such impurities with both high saturated vapor pressures and low segregation coefficients is investigated in this paper, where the results show that the removal of this type of impurities only depends on evaporation during vacuum induction melting process, thus their contents decrease significantly due to the strongly eva-oration under the high temperature and high vacuum conditions.

TL;DR: In this article, a theoretical model was established to obtain the loss rate of silicon, the removal efficiency of phosphorus and the corresponding energy consumption, and the results showed that phosphorus can be removed from silicon melt efficiently and quickly by EBM.

TL;DR: In this article, an experimental investigation into the removal of phosphorus from molten silicon using electron beam melting has been carried out, and the results show that, at a constant power, the content of phosphorus decreases rapidly within the range of approximately 0-900 s after silicon is melted completely, and then tends to level out with further extension of the melting time.

TL;DR: In this paper, the possibility of removing impurity boron (B) in MG-Si using CaO-Al 2 O 3 -SiO 2 -CaF 2 slags was investigated.

TL;DR: In this paper, a modified model which considers both segregation and evaporation is used to simulate the distribution, matching quite well with the experimental results, and a high removal efficiency and a homogeneous distribution can be obtained by adjusting these two parameters.