Ren Shiqiang

TL;DR: Based on the concentration distributions of aluminum and calcium along the growth direction, the removal mechanism of such impurities with both high saturated vapor pressures and low segregation coefficients is investigated in this paper, where the results show that the removal of this type of impurities only depends on evaporation during vacuum induction melting process, thus their contents decrease significantly due to the strongly eva-oration under the high temperature and high vacuum conditions.

TL;DR: In this paper, the authors obtained multicrystalline silicon ingots without and with alternating magnetic field during directional solidification process under industrial system were obtained from metallurgical grade silicon (MG-Si).

TL;DR: A multicrystalline silicon ingot was obtained from metallurgical-grade silicon after directional solidification under low vacuum condition, and the concentration distributions of metal impurities such as copper (Cu), manganese (Mn), and sodium (Na) along the growth direction of the ingot were investigated.

TL;DR: In this paper, a modified model which considers both segregation and evaporation is used to simulate the distribution, matching quite well with the experimental results, and a high removal efficiency and a homogeneous distribution can be obtained by adjusting these two parameters.

TL;DR: The relationship between crystal morphology and concentration of metal impurities was studied in this article, which showed that columnar grains can improve the ratio of the high-purity area, and more consistent with the calculated value by the Scheil's equation.