S
Silke Paschen
Researcher at Vienna University of Technology
Publications - 258
Citations - 5896
Silke Paschen is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Thermoelectric effect & Kondo effect. The author has an hindex of 37, co-authored 243 publications receiving 5130 citations. Previous affiliations of Silke Paschen include ETH Zurich & Rice University.
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Proceedings ArticleDOI
Electrical Resistivity of Single Crystalline Ce3Pd20Si6 Across the Temperature-Magnetic Field Phase Diagram
Journal ArticleDOI
A design principle to predict strongly correlated topological semimetals
High-temperature thermoelectric properties of a- and PEu,Ga,,Ge,
TL;DR: In this paper, the authors present the thermoelectric properties of an aEu,Ga,Ge,, and a p Eu, Ga,Ge, sample with a GdGe ratio that deviates slightly from the ideal 16/30 ratio.
Journal ArticleDOI
Preparation, Crystal Structure and Physical Properties of the Superconducting Cage Compound Ba3Ge16Ir4.
Hong Duong Nguyen,Yurii Prots,Walter Schnelle,Bodo Boehme,Michael Baitinger,Silke Paschen,Yuri Grin +6 more
TL;DR: In this article, the title compound was prepared from a stoichiometric mixture of BaGe, Ge, and Ir (Ar atmosphere, glassy carbon crucible, 910 °C, 10 d).
Journal ArticleDOI
A Knudsen cell approach for the molecular beam epitaxy of the heavy fermion compound YbRh<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e543" altimg="si45.svg"><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>Si<mml:math xmlns:mml="h
Emine Bakali,W. Artner,Maximilian Beiser,Juliane Bernardi,Hermann Detz,G. Eguchi,Annette Foelske,M. Giparakis,Caroline Herzig,Andreas Limbeck,H. Nguyen,L. Prochaska,Andrey Prokofiev,Markus Sauer,Stefan Schwarz,Werner Schrenk,Gottfried Strasser,Robert Svagera,Mathieu Taupin,A.S. Thirsfeld,M. Waas,X. Yan,Diego A. Zocco,A. M. Andrews,Silke Paschen +24 more
TL;DR: In this article , a set of X-ray diffraction peaks of the heavy fermion compound YbRh 2 Si 2 were characterized by a wide range of characterization techniques, and the most stoichiometric sample appeared to have the highest quality: it has the highest intensity ratio of the YbRH 2 si 2 (004) diffraction peak to the Ge (004), the highest R (10 K)/R (2.3 K) ratio, a smallest surface roughness, and only a small density of surface defects.