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Werner Schrenk
Researcher at Vienna University of Technology
Publications - 194
Citations - 3162
Werner Schrenk is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Laser & Terahertz radiation. The author has an hindex of 27, co-authored 189 publications receiving 2825 citations.
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Journal ArticleDOI
Microcavity-Integrated Graphene Photodetector
Marco M. Furchi,Alexander Urich,Andreas Pospischil,Govinda Lilley,Karl Unterrainer,Hermann Detz,Pavel Klang,Aaron Maxwell Andrews,Werner Schrenk,Gottfried Strasser,Thomas Mueller +10 more
TL;DR: In this paper, the authors demonstrate that by monolithically integrating graphene with a Fabry-Perot microcavity, the optical absorption is 26-fold enhanced, reaching values >60%.
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Monolithically integrated mid-infrared lab-on-a-chip using plasmonics and quantum cascade structures
Benedikt Schwarz,Peter Reininger,Daniela Ristanic,Hermann Detz,Aaron Maxwell Andrews,Werner Schrenk,Gottfried Strasser +6 more
TL;DR: A monolithically integrated sensor based on mid-infrared absorption spectroscopy based on a bi-functional quantum cascade laser/detector is used, where, by changing the applied bias, the device switches between laser and detector operation.
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Measurement of bound states in the continuum by a detector embedded in a photonic crystal.
Roman Gansch,S. Kalchmair,Patrice Genevet,Patrice Genevet,Tobias Zederbauer,Hermann Detz,Aaron Maxwell Andrews,Werner Schrenk,Federico Capasso,Marko Loncar,Gottfried Strasser +10 more
TL;DR: The ability to probe the field intensity inside the photonic crystal and thereby to directly measure BICs represents a milestone in the development of integrated opto-electronic devices based on BICS.
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High power terahertz quantum cascade lasers with symmetric wafer bonded active regions
M. Brandstetter,Christoph Deutsch,Michael Krall,Hermann Detz,Donald MacFarland,Tobias Zederbauer,Aaron Maxwell Andrews,Werner Schrenk,Gottfried Strasser,Karl Unterrainer +9 more
TL;DR: In this article, the authors increased the active region/waveguide thickness of terahertz quantum cascade laser with semi-insulating surface plasmon waveguides by stacking two symmetric active regions on top of each other, via a direct wafer bonding technique.
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Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
Clemens Ostermaier,G. Pozzovivo,Jean-François Carlin,Bernhard Basnar,Werner Schrenk,Y. Douvry,Christophe Gaquiere,J.C. Dejaeger,K. Cico,Karol Fröhlich,M Gonschorek,Nicolas Grandjean,Gottfried Strasser,Dionyz Pogany,Jan Kuzmik +14 more
TL;DR: In this paper, GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n++ GaN are presented.