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Showing papers by "Simon Deleonibus published in 1998"

Proceedings Article•
New Lifetime Prediction Method Based on the Control of the Secondary Impact Ionization with the Substrate Bias

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B. Marchand1, Gerard Ghibaudo, Francis Balestra, G. Guegan, Simon Deleonibus •
École nationale supérieure d'électronique et de radioélectricité de Grenoble1
01 Jan 1998
TL;DR: In this paper, a new lifetime prediction method for hot carrier studies which is carried out close to the nominal operating conditions is proposed. But this method is not suitable for MOSFETs.
Abstract: Taking advantage o/the enhancement of the gate current and MOSFET degradation by the substrate bias, we propose a new lifetime prediction method for hot carrier studies which is carried out close to the nominal operating conditions.

4 citations