Simona Lorenti

TL;DR: In this article, a Si-based resonant cavity light emitting diode (RCLED) was constructed using chemical vapour deposition on a silicon substrate, where the Si/SiO 2 Fabry-Perot microcavities were fabricated to enhance the external quantum emission along the cavity axis and the spectral purity of emission from the films that were used as active media to fabricate a Sibased cavity light-emitting diode.

TL;DR: In this article, preliminary results concerning the micromachining procedure for fabricating a Si-based electrocatalytic membrane for miniaturised Si based proton exchange membrane fuel cells (PEMFC) are presented.

TL;DR: The structure and thermal stability in N2 of hydrogen-terminated (100) silicon has been studied by X-ray photoemission spectroscopy, transmission electron microscopy, atomic force microscopy and thermal programmed desorption, and reflection high energy electron diffraction as discussed by the authors.

TL;DR: In this article, the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO 2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors were reported.

TL;DR: In this article, a method for manufacturing a semiconductor substrate of a first concentration type, which comprises at least a buried insulating cavity, is described, comprising the following steps: forming a plurality of trenches, forming a surface layer on the substrate in order to close superficially the plurality, forming in the meantime a buried cavity in correspondence with the surface-distal end of the trenches.