Liliana Caristia

TL;DR: In this paper, the authors report on the fabrication and performances of extremely efficient Si-based light sources, which consist of MOS structures with erbium (Er) implanted in the thin gate oxide, and demonstrate strong 1.54 μm electroluminescence at 300 K with a 10% external quantum efficiency, comparable to that of standard light-emitting diodes using III-V semiconductors.

TL;DR: In this article, a Si-based resonant cavity light emitting diode (RCLED) was constructed using chemical vapour deposition on a silicon substrate, where the Si/SiO 2 Fabry-Perot microcavities were fabricated to enhance the external quantum emission along the cavity axis and the spectral purity of emission from the films that were used as active media to fabricate a Sibased cavity light-emitting diode.

TL;DR: In this article, the free energy difference between the metastable SiO and stable SiO2 phase and the strain energy associated with the different atomic densities of Si and SiO 2 was taken into account.

TL;DR: In this paper, the formation of polycrystalline Si layers on flexible plastic substrates, through plasma enhanced chemical vapor deposition and excimer laser annealing, is investigated.

TL;DR: In this article, the authors report on the fabrication and performances of the most efficient Si-based light sources, which consist of MOS structures with erbium (Er) implanted in the thin gate oxide.