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Sohail Ahmed

Researcher at University of New South Wales

Publications -  43
Citations -  717

Sohail Ahmed is an academic researcher from University of New South Wales. The author has contributed to research in topics: Frequency-shift keying & Bit error rate. The author has an hindex of 13, co-authored 43 publications receiving 492 citations. Previous affiliations of Sohail Ahmed include National University of Science and Technology & University of Southampton.

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Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

TL;DR: This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2D-TMDC materials and also includes an introduction of 2D materials along with the synthesis techniques.
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Inducing High Coercivity in MoS2 Nanosheets by Transition Element Doping

TL;DR: In this paper, a very large coercivity up to 1.87 kOe has been observed in 5 at% vanadium doped MoS2, which may attribute to a combination effect of localized charge transfer between V and S ions, pinning effect due to the in-between defects, stress induced by doping, and shape anisotropy due to two-dimensional nature of MoS 2 ribbons.
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A Distributed Multi-Agent RL-Based Autonomous Spectrum Allocation Scheme in D2D Enabled Multi-Tier HetNets

TL;DR: The proposed scheme enables the D2D users to achieve higher throughput and SE, higher signal-to-interference-plus-noise ratio and low outage ratio for cellular users, and better computational time efficiency and performs well in the dense multi-tier HetNets.
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Enhanced ferromagnetism in WS2 via defect engineering

TL;DR: In this paper, the authors employed WS2 powders as an example to study the relationship between defects and magnetism by annealing the powders under reducing atmosphere and found that pristine WS2 powder showed weak ferromagnetism at room temperature.
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Magnetic properties of Co doped WSe2 by implantation

TL;DR: In this paper, the potential of transition metal doped 2D WSe2 as a 2D dilute magnetic semiconductor has been explored experimentally by using a physical implantation method.