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Xiang Ding

Researcher at University of Electronic Science and Technology of China

Publications -  29
Citations -  660

Xiang Ding is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Magnetization & Ferromagnetism. The author has an hindex of 11, co-authored 21 publications receiving 305 citations. Previous affiliations of Xiang Ding include Wuhan University of Technology & University of New South Wales.

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One-step colloid fabrication of nickel phosphides nanoplate/nickel foam hybrid electrode for high-performance asymmetric supercapacitors

TL;DR: In this article, a facile synthesis of high-performance asymmetric supercapacitors with hybrid nickel phosphides/nickel foam as positive electrode and biomass-based sulfur-doped hierarchical porous activated carbon as negative electrodes was reported.
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Inducing High Coercivity in MoS2 Nanosheets by Transition Element Doping

TL;DR: In this paper, a very large coercivity up to 1.87 kOe has been observed in 5 at% vanadium doped MoS2, which may attribute to a combination effect of localized charge transfer between V and S ions, pinning effect due to the in-between defects, stress induced by doping, and shape anisotropy due to two-dimensional nature of MoS 2 ribbons.
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Recent advances in the electrochemistry of layered post-transition metal chalcogenide nanomaterials for hydrogen evolution reaction

TL;DR: In this paper, a review of post-transition metal chalcogenides (PTMCs) is presented with the aim to provide a summary to describe their fundamental electrochemical properties and electrocatalytic activity towards hydrogen evolution reaction (HER).
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Enhanced ferromagnetism in WS2 via defect engineering

TL;DR: In this paper, the authors employed WS2 powders as an example to study the relationship between defects and magnetism by annealing the powders under reducing atmosphere and found that pristine WS2 powder showed weak ferromagnetism at room temperature.
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Magnetic properties of Co doped WSe2 by implantation

TL;DR: In this paper, the potential of transition metal doped 2D WSe2 as a 2D dilute magnetic semiconductor has been explored experimentally by using a physical implantation method.