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Showing papers by "Songyou Wang published in 2004"


Journal ArticleDOI
TL;DR: In this article, the optimal O y(O qAr) gas ratio for the sample preparation will be in the 22 range 0.5-0.6, in which the optical constants become less changed.

186 citations


Journal ArticleDOI
TL;DR: In this article, a series of rare-earth (RE)-doped nanocrystalline CoFeMn 0.9 RE 0.1 O 4 thin films were prepared on a monocrystaline silicon substrate by a sol-gel process, and the influences of the various RE 3+ ions on the microstructure, magnetism and polar magneto-optical Kerr effects of the as-deposited films were examined.

66 citations


Journal ArticleDOI
TL;DR: In this article, the Ag:Bi 2 O 3 composite samples with nano-sized Ag particles embedded in the bismuth oxide matrices have been prepared by using the co-sputtering method.

14 citations



Journal ArticleDOI
TL;DR: In this paper, first-principles molecular dynamics simulations are carried out to study the structural, dynamical, and electronic properties of liquid with 0.0, 0.2, 0 4, 0 6, 0 8, and 1.0 aluminum concentration.
Abstract: First-principles molecular dynamics simulations are carried out to study the structural, dynamical, and electronic properties of liquid ${\mathrm{Al}}_{x}{\mathrm{Ge}}_{1\ensuremath{-}x}$ with 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 of aluminum concentration. The concentration dependence of static structure factors, pair correlation functions, diffusion constants, and electronic density-of-states at temperature of 1250 K are investigated. The structural properties obtained from the simulations are in good agreement with neutron scattering experimental results.

7 citations


Journal ArticleDOI
TL;DR: In this article, structural and optical properties of GaN grown on (0001)-oriented sapphire substrates by low pressure metal-organic chemical vapor deposition were investigated by XRD, ellipsometry, PL and other optical methods.
Abstract: Structural and optical properties of GaN grown on (0001)-oriented sapphire substrates by low pressure metal-organic chemical vapor deposition were investigated by XRD, ellipsometry, PL and other optical methods. The thickness of the GaN sample was about 1.5 μm. Seen by XRD, the existence of the strong (0002) diffraction peak with a very narrow FWHM value of 0.1 and the high order GaN (0004) diffraction peak confirms a good quality of the GaN films grown on sapphire substrate by using a multi-step growth procedure. Optical transparency of the GaN samples induces strong interference oscillations below E0 (3.44eV) in the measured dielectric function spectra and reflective spectra. In low temperature PL spectra, the red shift of the peak and decreased intensity of PL are visible. The former can be attributed to the involvement of band tail states, and the latter can be accounted for by the decreasing non-radiative recombination lifetime.

4 citations



Journal ArticleDOI
TL;DR: In this paper, the real and imaginary parts of the complex dielectric function were measured by the spectroscopic ellipsometric method in the near-infrared region to study the optical properties of granular FeAg films.

3 citations


Journal ArticleDOI
TL;DR: In this paper, a new type of CCD spectroscopic ellipsometer has been designed and constructed to study the optical properties of materials in the 500-1000 nm wavelength range, where the analyzer is fixed, and the polarizer is driven 10 4 steps per revolution by a stepping motor having a hollow shaft.

2 citations