Showing papers by "Soumya R. Mohanty published in 2005"
TL;DR: In this article, the authors reported remarkable room-temperature ferromagnetic properties in epitaxial (Zn,Mn)O films grown by a pulsed-laser deposition technique using high-density targets.
Abstract: We report on the observation of remarkable room-temperature ferromagnetism in epitaxial (Zn,Mn)O films grown by a pulsed-laser deposition technique using high-density targets. The optimum growth conditions were demonstrated from x-ray measurements, microstructure, Rutherford backscattering, micro-Raman, and magnetic studies. Superior ferromagnetic properties were observed in (Zn,Mn)O films grown at a substrate temperature of 500°C and with an oxygen partial pressure of 1mTorr. Ferromagnetism becomes weaker with increasing substrate temperature due to the formation of isolated Mn clusters irrespective of higher crystalline quality of the film.
58 citations
TL;DR: In this article, the integration of epitaxial colossal magnetoresistive La0.67Ba0.33MnO films on Si(100) semiconductor using SrTiO3 template layer by pulsed-laser deposition was reported.
Abstract: We report on the integration of epitaxial colossal magnetoresistive La0.67Ba0.33MnO films on Si(100) semiconductor using SrTiO3 template layer by pulsed-laser deposition. X-ray diffraction reveals the superior quality of the manganite film that grows epitaxially on heteroepitaxially grown SrTiO3 template layer on Si substrate. The epitaxial films demonstrate remarkable surface morphology, magnetic transition and hysteresis, magnetoresistance, and ferromagnetic resonance, illustrating the ferromagnetic nature of the film and possible device applications at room temperature.
42 citations
TL;DR: In this article, the authors report on the fabrication of highly epitaxial Y2O3:Eu3+ and Lu2O 3:EU3+ films on sapphire and Si single crystalline, and quartz substrates under different growth and optimization conditions using pulsed-laser deposition technique.
Abstract: We report on the fabrication of highly epitaxial Y2O3:Eu3+ and Lu2O3:Eu3+ films on sapphire and Si single crystalline, and quartz substrates under different growth and optimization conditions using pulsed-laser deposition technique. The films were characterized using x rays, microstructure, and spectroscopic measurements. Our results demonstrate superior spectroscopic performance on the films grown on sapphire substrates due to the high quality and epitaxial nature of the film. The surface morphology of the epitaxial films controls the photoluminescence property of these phosphors film.
24 citations